650V N channel MOSFET OSEN OSPF12N65 suitable for switch mode power supplies and power factor correction
Key Attributes
Model Number:
OSPF12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
620mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.8pF
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
2.1nF
Pd - Power Dissipation:
58W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
OSPF12N65
Package:
TO-220F
Product Description
OSPF12N65 650V N-CHANNEL MOSFET
The OSPF12N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF12N65
- Revision: Rev 21.2.10
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage-Continuous | VGS | ±30 | V | |
| Drain Current-Continuous (Note 2) | ID | 12 | A | |
| Drain Current-Single Pulsed (Note 1) | IDM | 48 | A | |
| Power Dissipation (Note 2) | PD | 58 | W | |
| Max.Operating junction temperature | Tj | 150 | °C | |
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | 650 | V | ID=250µA, VGS=0V, TJ=25°C |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250μA |
| Drain-Source On-Resistance | RDS(on) | 0.62 | Ω | VGS=10V, ID=6A |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V, VGS=0 |
| Forward Transconductance | gfs | 12.5 | S | VDS=15V, ID=6A |
| Turn-On Delay Time | Td(on) | 18 | ns | VDS=325V, ID=12A, RG=25Ω(Note 2) |
| Rise Time | Tr | 20 | ns | |
| Turn-Off Delay Time | Td(off) | 45 | ns | |
| Fall Time | Tf | 25 | ns | |
| Total Gate Charge | Qg | 42 | nC | VDS=325, VGS=10V, ID=12A(Note 2) |
| Gate-Source Charge | Qgs | 8.5 | nC | |
| Gate-Drain Charge | Qgd | 21.5 | nC | |
| Input Capacitance | Ciss | 2100 | pF | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance | Coss | 205 | pF | |
| Reverse Transfer Capacitance | Crss | 24.8 | pF | |
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | 12 | A | |
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=12A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.2 | °C/W |
2410121732_OSEN-OSPF12N65_C20607821.pdf
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