Fast switching 30V N channel MOSFET OSEN A09T with enhanced ruggedness and low level drive capability
Key Attributes
Model Number:
A09T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Input Capacitance(Ciss):
450pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
A09T
Package:
SOT-23
Product Description
A09T 30V N-CHANNEL MOSFET
The A09T is a 30V N-channel MOSFET designed for high efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: A09T
- Revision: 21.2.10
- Package: SOT-23
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 30 | |||
| Gate-Source Voltage-Continuous (VGS) | V | 12 | |||
| Drain Current-Continuous (ID) (Note 2) | A | 5.8 | |||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 22 | |||
| Power Dissipation (PD) (Note 2) | W | 2 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250A VGS=0VTJ=25C | 30 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 0.6 | 0.9 | 1.5 |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=5.8A | -- | 21 | 28 |
| Gate-Body Leakage Current (IGSS) | nA | VGS=12VVDS=0 | -- | -- | 100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- | -- | 1 |
| Forward Transconductance (gfs) | S | VDS=5VID=5.8A | -- | 25 | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (Td(on)) (Note 2) | ns | VDS=10VID=5A RG=2.7,VGS=10V | -- | 4 | -- |
| Rise Time (Tr) | ns | -- | 15 | -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- | 22 | -- | |
| Fall Time (Tf) | ns | -- | 5 | -- | |
| Total Gate Charge (Qg) (Note 2) | nC | VDS=10V VGS=10V ID=5A | -- | 10 | -- |
| Gate-Source Charge (Qgs) | nC | -- | 0.5 | -- | |
| Gate-Drain Charge (Qgd) | nC | -- | 1 | -- | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=25VVGS=0 f=1MHz | -- | 450 | -- |
| Output Capacitance (Coss) | pF | -- | 90 | - | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 35 | -- | |
| Diode Characteristics | |||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 5.8 | |
| Diode Forward On-Voltage (VSD) | V | IS=1AVGS=0 | -- | -- | 1.2 |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 62.5 |
2410121731_OSEN-A09T_C20607740.pdf
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