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quality power dissipation and switching controllability in onsemi FGY100T120RWD for demanding industrial uses factory
quality power dissipation and switching controllability in onsemi FGY100T120RWD for demanding industrial uses factory

power dissipation and switching controllability in onsemi FGY100T120RWD for demanding industrial uses

Key Attributes
Model Number: FGY100T120RWD
Product Custom Attributes
Pd - Power Dissipation:
1.071kW
Td(off):
364ns
Td(on):
80ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
44.2pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.9V@100mA
Gate Charge(Qg):
427nC@15V
Reverse Recovery Time(trr):
256ns
Switching Energy(Eoff):
7.05mJ
Turn-On Energy (Eon):
8.13mJ
Input Capacitance(Cies):
12.2nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
392pF
Mfr. Part #:
FGY100T120RWD
Package:
TO-247-3
Product Description

Product Description

Utilizing the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO247 3-lead package, the FGY100T120RWD offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation in various applications. Its advantages include low conduction loss, optimized switching, high current capability, and suitability for parallel operation due to a positive temperature coefficient. It is designed for demanding applications such as motor control, UPS, data center power supplies, and high-power switching.

Product Attributes

  • Brand: onsemi
  • Certifications: RoHS Compliant
  • Package: TO247-3LD

Technical Specifications

ParameterSymbolValueUnitNotes
MAXIMUM RATINGS
Collector-to-Emitter VoltageVCES1200V
Gate-to-Emitter VoltageVGES20Transient 30 V
Collector CurrentIC100ATC = 100C
Power DissipationPD535WTC = 100C
Pulsed Collector CurrentICM300ATC = 25C, tp = 10 s
Diode Forward CurrentIF100ATC = 100C
Pulsed Diode Forward CurrentIFM300ATC = 25C, tp = 10 s
Short Circuit Withstand TimetSC5sVGE = 15 V, VCC = 600 V, TC = 150C
Operating Junction and Storage Temperature RangeTJ, TSTG-55 to 175C
Lead Temperature for Soldering PurposesTL260C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case for IGBTR JC0.14C/W
Thermal Resistance, Junction-to-Case for Diode0.23C/W
Thermal Resistance, Junction-to-AmbientR JA40C/W
ELECTRICAL CHARACTERISTICS OF THE IGBT
Collector-to-Emitter Breakdown VoltageBVCES1200VVGE = 0 V, IC = 5 mA
Collector-to-Emitter Cut-Off CurrentICES40AVGE = 0 V, VCE = VCES
Gate-to-Emitter Leakage CurrentIGES400nAVGE = 20 V, VCE = 0 V
Gate-to-Emitter Threshold VoltageVGE(TH)5.92VVGE = VCE, IC = 100 mA (Typ)
Collector-to-Emitter Saturation VoltageVCE(SAT)1.43VVGE = 15 V, IC = 100 A, TJ = 25C (Typ)
Collector-to-Emitter Saturation VoltageVCE(SAT)1.66VVGE = 15 V, IC = 100 A, TJ = 175C (Typ)
Input CapacitanceCies12200pFVCE = 30 V, VGE = 0 V, f = 1 MHz (Typ)
Output CapacitanceCoes392pF(Typ)
Reverse Transfer CapacitanceCres44.2pF(Typ)
Total Gate ChargeQg427nCVCE = 600 V, VGE = 15 V, IC = 100 A (Typ)
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (IGBT)
Turn-On Delay Timetd(on)74nsVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Turn-Off Delay Timetd(off)464nsVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Rise Timetr45nsVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Fall Timetf196nsVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Turn-On Switching LossEon3.43mJVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Turn-Off Switching LossEoff4.54mJVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
Total Switching LossEts7.97mJVCE = 600 V, VGE = 15 V, IC = 50 A, RG = 4.7 , TJ = 25C (Typ)
DIODE CHARACTERISTIC
Diode Forward VoltageVF1.80VIF = 100 A, TJ = 25C (Typ)
Diode Forward VoltageVF1.90VIF = 100 A, TJ = 175C (Typ)
DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Reverse Recovery Timetrr256nsVR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ)
Reverse Recovery ChargeQrr3140nCVR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ)
Reverse Recovery EnergyErec1mJVR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ)
Peak Reverse Recovery CurrentIRRM24.5AVR = 600 V, IF = 50 A, dIF/dt = 500 A/s, TJ = 25C (Typ)

2410121837_onsemi-FGY100T120RWD_C20047183.pdf

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