700V Power MOSFET OSEN OSPF70R550 Designed for Switch Mode Power Supplies and Power Factor Correction
Key Attributes
Model Number:
OSPF70R550
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
28W
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
750pF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
OSPF70R550
Package:
TO-220F
Product Description
Product Overview
The OSPF70R550 is a 700V Super-Junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF70R550
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 700 | V | |
| VGS | Gate-Source Voltage-Continuous | ±30 | V | |
| ID | Drain Current-Continuous (Note 2) | 7 | A | |
| IDM | Drain Current-Single Plused (Note 1) | 21 | A | |
| PD | Power Dissipation (Note 2) | 28 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| Static Characteristics | ||||
| BVDSS | Drain-Source Breakdown VoltageCurrent (Note 1) | 700 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th) | Gate Threshold Voltage | 2.5 - 4.5 | V | VDS=VGS, ID=250µA |
| RDS(on) | Drain-Source On-Resistance | 0.55 | Ω | VGS=10V, ID=3.5A |
| IGSS | Gate-Body Leakage Current | ±100 | nA | VGS=±30V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | 1 | µA | VDS=700V, VGS=0 |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | 8.5 | ns | VDS=300V,ID=3.7A, RG=25Ω |
| Tr | Rise Time | 4.5 | ns | |
| Td(off) | Turn-Off Delay Time | 45 | ns | |
| Tf | Fall Time | 7.0 | ns | |
| Qg | Total Gate Charge | 15 - 25 | nC | VDS=450V,VGS=10V, ID=3.5A |
| Qgs | Gate-Source Charge | 4.0 | nC | |
| Qgd | Gate-Drain Charge | 6.5 | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | 750 | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | 75 | pF | |
| Crss | Reverse Transfer Capacitance | 5.0 | pF | |
| IS | Continuous Drain-Source Diode Forward Current | 7 | A | |
| VSD | Diode Forward On-Voltage | 1.4 | V | IS=7A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | 4.2 | °C/W | |
2504101957_OSEN-OSPF70R550_C47148330.pdf
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