650 Volt Field Stop Trench IGBT onsemi FGHL50T65MQDTL4 Featuring Low Saturation Voltage for Converter
Key Attributes
Model Number:
FGHL50T65MQDTL4
Product Custom Attributes
Mfr. Part #:
FGHL50T65MQDTL4
Package:
TO-247-4
Product Description
Product Overview
The FGHL50T65MQDTL4 is a Field Stop Trench IGBT featuring 4th generation mid-speed technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for demanding applications, it boasts a maximum junction temperature of 175C and a positive temperature coefficient for easy parallel operation. Typical applications include solar inverters, UPS, ESS, PFC, and converters.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Model | VCES (V) | IC (A) @ TC=100C | VCE(sat) (V) Typ. @ IC=50A | TJ Max (C) | Package | Diode Type |
| FGHL50T65MQDTL4 | 650 | 50 | 1.45 | 175 | TO-247-4LD | Field Stop Trench IGBT |
| Parameter | Symbol | Value | Unit | Notes |
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage | VGES | ±20 | V | |
| Transient Gate to Emitter Voltage | ±30 | V | ||
| Collector Current @ TC = 25C | IC | 80 | A | Value limit by bond wire |
| Collector Current @ TC = 100C | IC | 50 | A | Value limit by bond wire |
| Pulsed Collector Current | ILM | 200 | A | VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load, 100% tested |
| Pulsed Collector Current | ICM | 200 | A | Repetitive rating: pulse width limited by max. junction temperature |
| Diode Forward Current @ TC = 25C | IF | 60 | A | |
| Diode Forward Current @ TC = 100C | IF | 50 | A | |
| Pulsed Diode Maximum Forward Current | IFM | 200 | A | |
| Maximum Power Dissipation @ TC = 25C | PD | 268 | W | |
| Maximum Power Dissipation @ TC = 100C | PD | 134 | W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +175 | C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 260 | C | 1/8 from case for 5 s |
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Collector to Emitter Breakdown Voltage | BVCES | 650 | - | - | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | - | -0.6 | - | V/C | VGE = 0 V, IC = 1 mA |
| Collector to Emitter Cutoff Current | ICES | - | - | 250 | A | VGE = 0 V, VCE = 650 V |
| Gate Leakage Current | IGES | - | - | ±400 | nA | VGE = 20 V, VCE = 0 V |
| Gate to Emitter Threshold Voltage | VGE(th) | 3.0 | 4.5 | 6.0 | V | VGE = VCE, IC = 50 mA |
| Collector to Emitter Saturation Voltage | VCE(sat) | - | 1.45 | 1.65 | V | VGE = 15 V, IC = 50 A, TJ = 25C |
| Collector to Emitter Saturation Voltage | VCE(sat) | - | 1.8 | - | V | VGE = 15 V, IC = 50 A, TJ = 175C |
| Input Capacitance | Cies | - | 3335 | - | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | - | 105 | - | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | - | 11 | - | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | - | 99 | - | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate to Emitter Charge | Qge | - | 17 | - | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate to Collector Charge | Qgc | - | 24 | - | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Turn-on Delay Time | td(on) | - | 45 | - | ns | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Rise Time | tr | - | 18 | - | ns | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Delay Time | td(off) | - | 360 | - | ns | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Fall Time | tf | - | 51 | - | ns | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Switching Loss | Eon | - | 0.44 | - | mJ | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Switching Loss | Eoff | - | 0.35 | - | mJ | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Total Switching Loss | Ets | - | 0.79 | - | mJ | TJ = 25C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Delay Time | td(on) | - | 50 | - | ns | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Rise Time | tr | - | 27 | - | ns | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Delay Time | td(off) | - | 336 | - | ns | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Fall Time | tf | - | 37 | - | ns | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Switching Loss | Eon | - | 1.00 | - | mJ | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Switching Loss | Eoff | - | 0.85 | - | mJ | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Total Switching Loss | Ets | - | 1.85 | - | mJ | TJ = 25C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Delay Time | td(on) | - | 40 | - | ns | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Rise Time | tr | - | 22 | - | ns | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Delay Time | td(off) | - | 389 | - | ns | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Fall Time | tf | - | 85 | - | ns | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Switching Loss | Eon | - | 0.84 | - | mJ | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Switching Loss | Eoff | - | 0.61 | - | mJ | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Total Switching Loss | Ets | - | 1.45 | - | mJ | TJ = 175C, VCC = 400 V, IC = 25 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Delay Time | td(on) | - | 43 | - | ns | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Rise Time | tr | - | 35 | - | ns | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Delay Time | td(off) | - | 365 | - | ns | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Fall Time | tf | - | 72 | - | ns | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-on Switching Loss | Eon | - | 1.60 | - | mJ | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Turn-off Switching Loss | Eoff | - | 1.30 | - | mJ | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Total Switching Loss | Ets | - | 2.90 | - | mJ | TJ = 175C, VCC = 400 V, IC = 50 A, RG = 30 Ω, VGE = 15 V |
| Diode Forward Voltage | VF | - | 1.65 | 2.1 | V | IF = 50 A, TJ = 25C |
| Diode Forward Voltage | VF | - | 1.55 | - | V | IF = 50 A, TJ = 175C |
| Diode Reverse Recovery Energy | Erec | - | 65 | - | pJ | TJ = 25C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Time | Trr | - | 44 | - | ns | TJ = 25C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Charge | Qrr | - | 387 | - | nC | TJ = 25C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Current | Irr | - | 18 | - | A | TJ = 25C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Energy | Erec | - | 128 | - | pJ | TJ = 25C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Time | Trr | - | 79 | - | ns | TJ = 25C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Charge | Qrr | - | 681 | - | nC | TJ = 25C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Current | Irr | - | 17 | - | A | TJ = 25C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Energy | Erec | - | 380 | - | pJ | TJ = 175C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Time | Trr | - | 102 | - | ns | TJ = 175C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Charge | Qrr | - | 1482 | - | nC | TJ = 175C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Current | Irr | - | 29 | - | A | TJ = 175C, VCE = 400 V, IF = 25 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Energy | Erec | - | 544 | - | pJ | TJ = 175C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Time | Trr | - | 135 | - | ns | TJ = 175C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Charge | Qrr | - | 2023 | - | nC | TJ = 175C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
| Diode Reverse Recovery Current | Irr | - | 30 | - | A | TJ = 175C, VCE = 400 V, IF = 50 A, diF/dt = 1000 A/ s |
2210271800_onsemi-FGHL50T65MQDTL4_C5209100.pdf
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