Power MOSFET P Channel type with 60 milliohm max on resistance and 30V VDS PJSEMI PJM3401PSC device
Key Attributes
Model Number:
PJM3401PSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V;70mΩ@4.5V;90mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
PJM3401PSC
Package:
SOT-23
Product Description
PJM3401PSC P-Channel Power MOSFET
The PJM3401PSC is a P-Channel Power MOSFET designed for load switching and PWM applications. It offers a VDS of -30V and a continuous drain current of -4.5A, with a low on-resistance of 60m(max) at -10V. This device is halogen and antimony free, making it an environmentally conscious choice for various electronic designs.
Product Attributes
- Brand: PingJingSemi
- Certifications: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS = 0V, ID=-250A | 30 | V | ||
| Drain to Source Leakage Current | -IDSS | VDS =-30V,VGS = 0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | -VGS(th) | VDS =VGS, ID =-250A | 0.7 | 1.3 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =-10V, ID =-4.1A | 60 | m | ||
| VGS =-4.5V, ID =-4A | 70 | m | ||||
| VGS =-2.5V, ID =-1A | 90 | m | ||||
| Forward Transconductance | gFS | VDS =-5V, ID =-5A | 8.5 | S | ||
| Input Capacitance | Ciss | VDS = -15V,VGS = 0V,f=1MHz | 880 | pF | ||
| Output Capacitance | Coss | 105 | pF | |||
| Reverse Transfer Capacitance | Crss | 65 | pF | |||
| Turn-on Delay Time | td(on) | VDS=-15V, VGS=-10VRGEN =6, ID=-4.2A | 7 | ns | ||
| Turn-on Rise Time | tr | 3 | ||||
| Turn-off Delay Time | td(off) | 30 | ||||
| Turn-off Fall Time | tf | 7 | ||||
| Total Gate Charge | Qg | VDD =-15V,VGS =-4.5V,ID =-4.2A | 12 | nC | ||
| Gate-Source Charge | Qgs | 1.8 | ||||
| Gate-Drain Charge | Qgd | 2.7 | ||||
| Diode Forward Voltage | -VSD | VGS =0V, IS=-4.2A | 1.2 | V | ||
| Continuous Drain Current | -ID | TA =25 | 4.5 | A | ||
| Power Dissipation | PD | TA =25 | 1.4 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | Note1 | 89 | C/W |
2101071837_PJSEMI-PJM3401PSC_C2683748.pdf
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