Power MOSFET OSEN OSPF65R280 650V Super Junction with RoHS Compliance and Low RDSon Resistance
Key Attributes
Model Number:
OSPF65R280
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6.5pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
25nC@15V
Mfr. Part #:
OSPF65R280
Package:
TO-220F
Product Description
OSPF65R280 650V Super-Junction Power MOSFET
The OSPF65R280 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. Ideal for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 650 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-Continuous | 15 | A | Note 2 |
| IDM | Drain Current-Single Pulsed | 45 | A | Note 1 |
| PD | Power Dissipation | 40 | W | Note 2 |
| Tj Max | Max.Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown VoltageCurrent | 650 | V | ID=250A VGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.22 0.28 | VGS=10VID=7.5A | |
| IGSS | Gate-Body Leakage Current | -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- 1 | A | VDS=600VVGS=0 |
| Td(on) | Turn-On Delay Time | -- 35 -- | ns | VDS=350V,ID=15A RG=25 |
| Tr | Rise Time | -- 15 -- | ns | |
| Td(off) | Turn-Off Delay Time | -- 105 -- | ns | |
| Tf | Fall Time | -- 5 -- | ns | |
| Qg | Total Gate Charge | -- 25 -- | nC | VDS=480V,VGS=15V ID=11A |
| Qgs | Gate-Source Charge | -- 8 -- | nC | |
| Qgd | Gate-Drain Charge | -- 10 -- | nC | |
| Ciss | Input Capacitance | -- 1100 -- | pF | VDS=50VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- 75 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 6.5 -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current | -- 15 | A | |
| VSD | Diode Forward On-Voltage | -- 1.3 | V | IS=15AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- 3.13 | /W |
2410121732_OSEN-OSPF65R280_C20607849.pdf
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