60V N Channel MOSFET OSEN OSP50N06T designed for power factor correction and switch mode power supplies
Key Attributes
Model Number:
OSP50N06T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
15.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Input Capacitance(Ciss):
900pF
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
OSP50N06T
Package:
TO-220AB
Product Description
Product Overview
The OSP50N06T is a 60V N-Channel MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is suitable for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSP50N06T
- Revision: Rev 21.2.10
Technical Specifications
| Symbol | Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 60 | |||
| VGS | Gate-Source Voltage-Continuous | V | 20 | |||
| ID | Drain Current-Continuous (Note 2) | A | 50 | |||
| IDM | Drain Current-Single Plused (Note 1) | A | 200 | |||
| PD | Power Dissipation (Note 2) | W | 100 | |||
| Tj | Max.Operating junction temperature | 150 | ||||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250A VGS=0VTJ=25C | 60 | -- | -- |
| VGS(th) | Gate Threshold Voltage | V | VDS=VGSID=250A | 1.1 | 1.6 | 2.1 |
| RDS(on) | Drain-Source On-Resistance | m | VGS=10VID=20A | -- | 13.5 | 15.5 |
| IGSS | Gate-Body Leakage Current | nA | VGS=20VVDS=0 | -- | -- | 100 |
| IDSS | Zero Gate Voltage Drain Current | A | VDS=60VVGS=0 | -- | -- | 1 |
| gfs | Forward Transconductance | S | VDS=30VID=25A | 25 | -- | -- |
| Switching Characteristics | ||||||
| Tdon | Turn-On Delay Time | ns | VDS=30VID=25A RG=50Note 2 | -- | 22 | -- |
| Tr | Rise Time | ns | -- | 15 | -- | |
| Tdoff | Turn-Off Delay Time | ns | -- | 50 | -- | |
| Tf | Fall Time | ns | -- | 40 | -- | |
| Qg | Total Gate Charge | nC | VDS=48V VGS=10V ID=50ANote 2 | -- | 39 | -- |
| Qgs | Gate-Source Charge | nC | -- | 9.3 | -- | |
| Qgd | Gate-Drain Charge | nC | -- | 13 | -- | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | pF | VDS=25VVGS=0 f=1MHz | -- | 900 | -- |
| Coss | Output Capacitance | pF | -- | 130 | -- | |
| Crss | Reverse Transfer Capacitance | pF | -- | 25 | -- | |
| Diode Characteristics | ||||||
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | A | -- | -- | 50 | |
| VSD | Diode Forward On-Voltage | V | IS=20AVGS=0 | -- | -- | 1.4 |
| Thermal Characteristics | ||||||
| Rth(j-c) | Thermal Resistance, Junction to Case | /W | -- | -- | 0.96 | |
2410121732_OSEN-OSP50N06T_C20607810.pdf
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