Load Switching MOSFET PJSEMI PJM3402NSC with 4A Continuous Current and 1.3W Maximum Power Dissipation

Key Attributes
Model Number: PJM3402NSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
285pF
Gate Charge(Qg):
2.6nC@4.5V
Mfr. Part #:
PJM3402NSC
Package:
SOT-23-3
Product Description

Product Overview

The PJM3402NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering high power and current handling capabilities. It features a VDS of 30V and an ID of 4A, with a low RDS(on) of less than 45m at VGS=10V. This component is ideal for power management solutions.

Product Attributes

  • Brand: Pingjing Semiconductor (implied by www.pingjingsemi.com)
  • Package: SOT-23-3

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS±12V
Drain Current-ContinuousID4A
Drain Current-PulsedIDMNote116A
Maximum Power DissipationPD1.3W
Junction TemperatureTJ150°C
Storage Temperature RangeTSTG-55+150°C
Thermal Characteristics
Thermal Resistance,Junction-to-AmbientRθJANote296°C/W
Static Characteristics
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V,ID=250μA30----V
Zero Gate Voltage Drain CurrentIDSSVDS=30V,VGS=0V----1μA
Gate-Body Leakage CurrentIGSSVGS=±12V,VDS=0V----±100nA
Gate Threshold VoltageVGS(th)Note3,VDS=VGS,ID=250μA0.5--1.4V
Drain-Source On-ResistanceRDS(on)Note3,VGS=10V, ID=4A--3645
Drain-Source On-ResistanceRDS(on)Note3,VGS=4.5V, ID=3A--3950
Forward TransconductancegFSNote3,VDS=5V,ID=1A--4--S
Dynamic Characteristics
Input CapacitanceCissVDS=15V,VGS=0V,f=1MHz--285--pF
Output CapacitanceCossVDS=15V,VGS=0V,f=1MHz--33--pF
Reverse Transfer CapacitanceCrssVDS=15V,VGS=0V,f=1MHz--27--pF
Switching Characteristics
Turn-on Delay Timetd(on)VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω--15--nS
Turn-on Rise TimetrVDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω--42--nS
Turn-off Delay Timetd(off)VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω--16--nS
Turn-off Fall TimetfVDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω--10--nS
Total Gate ChargeQgVDS=15V,ID=4A, VGS=4.5V--2.6--nC
Gate-Source ChargeQgsVDS=15V,ID=4A, VGS=4.5V--0.6--nC
Gate-Drain ChargeQg dVDS=15V,ID=4A, VGS=4.5V--0.9--nC
Source-Drain Diode Characteristics
Body Diode Forward VoltageVSDNote3,VGS=0V,IS=4A----1.2V
Diode Forward CurrentISNote2----4A

2411121111_PJSEMI-PJM3402NSC_C41413547.pdf

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