P Channel Enhancement Mode MOSFET PJSEMI PJM20P30TE Designed for Power Management and Switching
Key Attributes
Model Number:
PJM20P30TE
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 P-Channel
Pd - Power Dissipation:
29W
Input Capacitance(Ciss):
1.332nF
Gate Charge(Qg):
17nC@15V
Mfr. Part #:
PJM20P30TE
Package:
TO-252
Product Description
Product Overview
The PJM20P30TE is a P-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It features advanced trench technology, 100% avalanche testing, and RoHS compliance, making it suitable for power management solutions. Its robust design ensures reliable performance in demanding applications.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | -VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 20 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 80 | A | ||
| Maximum Power Dissipation | PD | 29 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 25 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.3 | °C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-7A | -- | 12 | 20 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-4A | -- | 18 | 28 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-2A | -- | 7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 1332 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 179 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 145 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 12 | -- | Ω |
| Total Gate Charge | Qg | VDS=-15V,ID=-5A, VGS=0~-10V | -- | 17 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-5A, VGS=0~-10V | -- | 3 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-5A, VGS=0~-10V | -- | 4 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-5A, VGS=-10V, RGEN=3Ω | -- | 4 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-5A, VGS=-10V, RGEN=3Ω | -- | 2 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-5A, VGS=-10V, RGEN=3Ω | -- | 37 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-5A, VGS=-10V, RGEN=3Ω | -- | 26 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-20A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 20 | A | |
2407301136_PJSEMI-PJM20P30TE_C36493745.pdf
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