Compact dual transistor PAKER MMDT3906 featuring PNP epitaxial planar dies and halogen free packaging

Key Attributes
Model Number: MMDT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
-
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3906
Package:
SOT-363
Product Description

Product Overview

The MMDT3906 is a SOT-363 plastic-encapsulated dual transistor package featuring two PNP epitaxial planar die constructions. It offers high stability and reliability, serving as a complementary pair to the 3904. This device is halogen-free and RoHS compliant.

Product Attributes

  • Brand: (Parker Microelectronics)
  • Origin: Shenzhen, China
  • Certifications: Halogen free, RoHS compliant, UL: 94V-0

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=-10A, IE=0-40V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=-1mA, IB=0-40V
Emitter-Base Breakdown VoltageV(BR)EBOIE=-10A, IC=0-5V
Emitter Cut-off CurrentIEBOVEB=-5V, IC=0-50nA
Collector Cut-off CurrentICEXVCE=-30V, VBE(off)=-3V-50nA
DC Current GainhFE(1)VCE=-1V, IC=-0.1mA60
hFE(2)VCE=-1V, IC=-1mA80
hFE(3)VCE=-1V, IC=-10mA100300
hFE(4)VCE=-1V, IC=-50mA60
hFE(5)VCE=-1V, IC=-100mA30
Collector-Emitter Saturation VoltageVCE(sat)1IC=-10mA, IB=-1mA-0.25V
VCE(sat)2IC=-50mA, IB=-5mA-0.4V
Base-Emitter Saturation VoltageVBE(sat)1IC=-10mA, IB=-1mA-0.65-0.85V
VBE(sat)2IC=-50mA, IB=-5mA-0.95V
Transition FrequencyfTVCE=-20V, IC=-10mA, f=100MHz250MHz
Switching CharacteristicstdVCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA35nS
trVCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA35nS
Switching CharacteristicstsVCC=-3V, IC=-10mA, IB1=-IB2=-1mA225nS
tfVCC=-3V, IC=-10mA, IB1=-IB2=-1mA75nS

2511251038_PAKER-MMDT3906_C5278914.pdf

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