Parker SI2309-K P Channel Enhancement Mode MOSFET Offering Low On Resistance and Halogen Free Design
Key Attributes
Model Number:
SI2309-K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
RDS(on):
150mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
15pF
Input Capacitance(Ciss):
310pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.4nC
Mfr. Part #:
SI2309-K
Package:
SOT-23
Product Description
Product Overview
The SI2309 is a P-Channel Enhancement Mode Power MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package, offering an industry-standard form factor. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand: (Pakermicro)
- Origin: (Shenzhen)
- Package Type: SOT-23
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Packing: Tape/Reel, 7" reel, 3000 pcs (EIA-481-1)
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250A |
| Gate-Source Voltage | VGS | 20 | V | |
| Maximum Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TSTG | -50 to 150 | C | |
| Continuous Drain Current | ID | -2 | A | TA=25C |
| Continuous Drain Current | ID | -1.6 | A | TA=70C |
| Pulse Drain Current | IDM | -8 | A | Tested (Pulse width limited by maximum allowable junction temperature) |
| Maximum Power Dissipation | PD | 1 | W | TA=25C |
| Maximum Power Dissipation | PD | 0.8 | W | TA=70C |
| Thermal Resistance Junction-Ambient | RJA | 125 | C/W | Mounted on Large Heat Sink |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-60V, VGS=0V, TA=25 |
| Zero Gate Voltage Drain Current | IDSS | -100 | A | VDS=-60V, VGS=0V, TA=125 |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -2.5 | V | VDS=VGS, ID=-250A |
| Drain-Source On-State Resistance | RDS(ON) | 150 to 200 | m | VGS=-10V, ID=-2A |
| Drain-Source On-State Resistance | RDS(ON) | 200 to 300 | m | VGS=-4.5V, ID=-1A |
| Input Capacitance | Ciss | 310 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 22 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 15 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Total Gate Charge | Qg | 5.4 | nC | VDS=-30V, ID=-2A, VGS=-10V |
| Gate Source Charge | Qgs | 1.1 | nC | VDS=-30V, ID=-2A, VGS=-10V |
| Gate Drain Charge | Qgd | 1.6 | nC | VDS=-30V, ID=-2A, VGS=-10V |
| Turn on Delay Time | td(on) | 41 | ns | VDD=-30V, ID=-2A, RG=3.3, VGS=-10V |
| Turn on Rise Time | tr | 22 | ns | VDD=-30V, ID=-2A, RG=3.3, VGS=-10V |
| Turn Off Delay Time | td(off) | 25 | ns | VDD=-30V, ID=-2A, RG=3.3, VGS=-10V |
| Turn Off Fall Time | tf | 32 | ns | VDD=-30V, ID=-2A, RG=3.3, VGS=-10V |
| Source drain current (Body Diode) | ISD | -1.4 | A | TA=25 |
| Forward on voltage (Body Diode) | VS D | -0.84 to -1.2 | V | ISD=-2A, VGS=0V, Tj=25 |
2412311646_PAKER-SI2309-K_C42432494.pdf
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