UF4SC120030K4S 1200V SiC FET combining normally on JFET and MOSFET for power switching applications
Key Attributes
Model Number:
UF4SC120030K4S
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
53A
Type:
N-Channel
Pd - Power Dissipation:
341W
Mfr. Part #:
UF4SC120030K4S
Product Description
SiC FET UF4SC120030K4S
Product Overview
The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device with standard gate-drive characteristics. This allows for seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF4SC120030K4S excels in applications requiring standard gate drive and efficient switching of inductive loads, offering ultra-low gate charge, exceptional reverse recovery, and low intrinsic capacitance. Its TO-247-4L package further enhances switching performance with cleaner gate waveforms. Typical applications include switch mode power supplies, PV inverters, EV charging, power factor correction modules, motor drives, and induction heating.
Product Attributes
- Part Number: UF4SC120030K4S
- Technology: Silicon Carbide (SiC) FET
- Package: TO-247-4L
- ESD Protection: HBM class 2 and CDM class C3
- Datasheet Revision: Rev. A, April 2022
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-source voltage | VDS | DC | 1200 | V | ||
| Gate-source voltage | VGS | AC (f > 1Hz) | -20 | +20 | V | |
| Continuous drain current | ID | TC = 25C, TC 40C | 53 | A | ||
| Pulsed drain current | IDM | TC = 25C, Pulse width tp limited by TJ,max | 164 | A | ||
| Single pulsed avalanche energy | EAS | L=15mH, IAS =3.6A, Starting TJ = 25C | 97 | mJ | ||
| SiC FET dv/dt ruggedness | dv/dt | VDS 800V | 200 | V/ns | ||
| Power dissipation | Ptot | TC = 25C | 341 | W | ||
| Maximum junction temperature | TJ,max | 175 | C | |||
| Operating and storage temperature | TJ, TSTG | -55 | 175 | C | ||
| Max. lead temperature for soldering, 1/8 from case for 5 seconds | TL | 250 | C | |||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-to-case | RJC | 0.34 | 0.44 | C/W | ||
| Electrical Characteristics (TJ = +25C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | BVDS | VGS=0V, ID=1mA | 1200 | V | ||
| Total drain leakage current | IDSS | VDS=1200V, VGS=0V, TJ=25C | 1 | 50 | A | |
| VDS=1200V, VGS=0V, TJ=175C | 15 | mA | ||||
| Total gate leakage current | IGSS | VDS=0V, TJ=25C, VGS=-20V / +20V | 6 | 20 | A | |
| Gate threshold voltage | VG(th) | VDS=5V, ID=10mA | 4 | 4.8 | 6 | V |
| Gate resistance | RG | f=1MHz, open drain | 4.5 | |||
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=20A, TJ=25C | 30 | 39 | m | |
| VGS=12V, ID=20A, TJ=125C | 39 | 56 | m | |||
| VGS=12V, ID=20A, TJ=175C | 56 | 77 | m | |||
| Forward voltage | VFSD | VGS=0V, IS=15A, TJ=25C | 1.22 | 1.35 | V | |
| VGS=0V, IS=15A, TJ=175C | 1.68 | V | ||||
| Diode continuous forward current | IS | TC 40C | 53 | A | ||
| Diode pulse current | IS,pulse | TC = 25C | 164 | A | ||
| Reverse recovery charge | Qrr | VR=800V, IS=30A, VGS=0V, RG=18W, di/dt=1840A/ms, TJ=25C | 277 | 298 | nC | |
| Reverse recovery time | trr | VR=800V, IS=30A, VGS=0V, RG=18W, di/dt=1840A/ms, TJ=25C | 12.8 | 14 | ns | |
| Reverse recovery charge | Qrr | VR=800V, IS=30A, VGS=0V, RG=18W, di/dt=1840A/ms, TJ=150C | nC | |||
| Reverse recovery time | trr | VR=800V, IS=30A, VGS=0V, RG=18W, di/dt=1840A/ms, TJ=150C | ns | |||
| Typical Performance - Dynamic | ||||||
| Input capacitance | Ciss | VDS=800V, VGS=0V, f=100kHz | 1450 | pF | ||
| Output capacitance | Coss | VDS=800V, VGS=0V, f=100kHz | 65 | 82 | pF | |
| Reverse transfer capacitance | Crss | VDS=800V, VGS=0V, f=100kHz | 2 | pF | ||
| Total gate charge | QG | VDS=800V, ID=30A, VGS = 0V to 15V | 37.8 | nC | ||
| Gate-source charge | QGS | VDS=800V, ID=30A, VGS = 0V to 15V | 11.8 | nC | ||
| Gate-drain charge | QGD | VDS=800V, ID=30A, VGS = 0V to 15V | 8 | nC | ||
| Turn-on delay time | td(on) | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 12 | 13 | ns | |
| Rise time | tr | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 19 | 20 | ns | |
| Turn-off delay time | td(off) | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 77 | 85 | ns | |
| Fall time | tf | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 11 | 12 | ns | |
| Turn-on energy including RS energy | EON | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 423 | 500 | mJ | |
| Turn-off energy including RS energy | EOFF | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 73 | 97 | mJ | |
| Total switching energy | ETOTAL | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=25C | 496 | 597 | mJ | |
| Turn-on delay time | td(on) | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 13 | ns | ||
| Rise time | tr | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 20 | ns | ||
| Turn-off delay time | td(off) | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 85 | ns | ||
| Fall time | tf | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 12 | ns | ||
| Turn-on energy including RS energy | EON | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 500 | mJ | ||
| Turn-off energy including RS energy | EOFF | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 97 | mJ | ||
| Total switching energy | ETOTAL | Note 4 and 5, VDS=800V, ID=30A, Gate Driver =0V to +15V, RG_ON=1W, RG_OFF=18W, inductive Load, FWD: same device with VGS = 0V and RG =18W, Snubber: Rs=10W, Cs=47pF TJ=150C | 597 | mJ | ||
2411272256_Qorvo-UF4SC120030K4S_C7136722.pdf
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