Power MOSFET PAKER AO3401 P Channel Enhancement Mode Device with Halogen Free RoHS Compliant Design
Key Attributes
Model Number:
AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
55mΩ@10V,4.2A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
8.5nC
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description
Product Overview
The AO3401 is a P-Channel Enhancement Mode Power MOSFET housed in a SOT-23 Small Outline Plastic Package. It features a high-density cell design for ultra-low on-resistance, advanced trench process technology, and is halogen-free and RoHS compliant. This MOSFET is suitable for various power management applications requiring efficient switching and low conduction losses.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Package: SOT-23 Small Outline Plastic Package
- Marking: R1
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| ID | Zero Gate Voltage Drain Current | VDS=-30VVGS=0V | -- | -- | -1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=12VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=-250A | -0.6 | -0.9 | -1.3 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-10V ID=-4.2A | -- | 43 | 55 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=-4.5VID=-2.5A | -- | 50 | 68 | m |
| CISS | Input Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 1500 | -- | pF |
| COSS | Output Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 80 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 2 | -- | pF |
| Qg | Total Gate Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 8.5 | -- | nC |
| Qgs | Gate Source Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 1.8 | -- | nC |
| Qgd | Gate Drain Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 2.7 | -- | nC |
| td(on) | Turn-on Delay Time | VDS=-15VID=-1A VGS=-10VRG=3 | -- | 7 | -- | nS |
| tr | Turn-on Rise Time | VDS=-15VID=-1A VGS=-10VRG=3 | -- | 3 | -- | nS |
| td(off) | Turn-Off Delay Time | VDS=-15VID=-1A VGS=-10VRG=3 | -- | 20 | -- | nS |
| tf | Turn-Off Fall Time | VDS=-15VID=-1A VGS=-10VRG=3 | -- | 12 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=-3A | -- | -0.85 | -1.2 | V |
| VGS | Gate-Source Voltage | -- | 12 | -- | -- | V |
| VDS | Drain-Source Breakdown Voltage | -- | -30 | -- | -- | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | C |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -4.2 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -16.5 | -- | A |
| ID | Continuous Drain Current@GS=10V | Tc=25C | -- | -4.2 | -- | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | 1.5 | -- | W |
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | -- | 82 | -- | C/W |
2410122013_PAKER-AO3401_C5278897.pdf
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