Low On Resistance N Channel Enhancement Mode MOSFET PAKER SI2306 for Power Management Applications
Key Attributes
Model Number:
SI2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
275pF
Gate Charge(Qg):
6.6nC
Mfr. Part #:
SI2306
Package:
SOT-23
Product Description
Product Overview
The SI2306 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It utilizes advanced trench process technology and is housed in a SOT-23 small outline plastic package. This device is halogen-free and RoHS compliant, offering high performance for various power management applications.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Certifications: UL:94-V-0, Halogen free, RoHS compliant
- Package Type: SOT-23 Small Outline Plastic Package
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | 1 | -- | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | 100 | -- | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1 | 1.5 | 2.2 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10VID=4A | -- | 32 | 50 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=3A | -- | 41 | 60 | m |
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 275 | -- | pF |
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 43 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 33 | -- | pF |
| Qg | Total Gate Charge | VDS=15VID=4A VGS=10V | -- | 6.6 | -- | nC |
| Qgs | Gate Source Charge | VDS=15VID=4A VGS=10V | -- | 1.4 | -- | nC |
| Qgd | Gate Drain Charge | VDS=15VID=4A VGS=10V | -- | 2 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=15VRL=3.6 VGS=4.5VRG=6 | -- | 3.3 | -- | nS |
| tr | Turn-on Rise Time | VDD=15VRL=3.6 VGS=4.5VRG=6 | -- | 14.8 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=15VRL=3.6 VGS=4.5VRG=6 | -- | 12 | -- | nS |
| tf | Turn-Off Fall Time | VDD=15VRL=3.6 VGS=4.5VRG=6 | -- | 3.1 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=4A | -- | -- | 1.2 | V |
| VDS | Drain-Source Breakdown Voltage | -- | 30 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | 20 | -- | -- | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -55 | -- | 150 | C |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 4 | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 15 | A |
| ID | Continuous Drain Current | Tc=25C | -- | -- | 4 | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | -- | 1.2 | W |
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | -- | -- | 125 | C/W |
2410122013_PAKER-SI2306_C5278889.pdf
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