N Channel Enhancement Mode Power MOSFET with Ultra Low On Resistance PAKER SI2302 SOT 23 Package
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
59mΩ@2.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
33pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
340pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package and is halogen-free and RoHS compliant. This advanced trench process technology MOSFET offers high performance for various power management applications.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: (Shenzhen)
- Package: SOT-23
- Certifications: UL 94V-0, Halogen free, RoHS compliant
- Packing: Tape/Reel, 7" reel, 3000 pcs per reel (EIA-481-1 standard)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA = 25°C | 12 | A | ||
| Pulsed Drain Current | IDM | A | ||||
| Maximum Power Dissipation | PD | TA = 25°C | W | |||
| TA = 75°C | 0.8 | W | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 3) | 166 | °C/W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 2) | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250µA | 20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5V, ID = 3A | 30 | mΩ | ||
| VGS = 2.5V, ID = 2.5A | 37 | mΩ | ||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 0.6 | 1.5 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, V GS = 0V | 1 | µA | ||
| TJ=55 °C | 10 | µA | ||||
| Gate Body Leakage | IGSS | VGS = ±10V, VDS = 0V | ±100 | nA | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 45 | S | ||
| Electrical Characteristics (Continued) | ||||||
| Dynamic Total Gate Charge | Qg | VDS = 10V, ID = 3A, VGS = 4.5V | 5.4 | nC | ||
| Gate-Source Charge | Qgs | 0.65 | nC | |||
| Gate-Drain Charge | Qgd | 1.6 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 10V, RL=5.5Ω, ID 3A,VGEN = 4.5V, RG = 6 Ω | 10 | ns | ||
| Turn-On Rise Time | tr | 12 | ns | |||
| Turn-Off Delay Time | td(off) | 36 | ns | |||
| Turn-Off Fall Time | tf | 34 | ns | |||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1.0 MHz | 340 | pF | ||
| Output Capacitance | Coss | 115 | pF | |||
| Reverse Transfer Capacitance | Crss | 33 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | 1.6 | A | |||
| Diode Forward Voltage | VSD | IS = 1.0A, V GS = 0V | 1.2 | V | ||
2410121729_PAKER-SI2302_C5278885.pdf
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