Switching Power MOSFET ORIENTAL SEMI OSG60R099KSZF with Fast Recovery Diode and Low On Resistance
Key Attributes
Model Number:
OSG60R099KSZF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
36A
RDS(on):
99mΩ@10V,18A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
3.9175nF
Gate Charge(Qg):
66.8nC@10V
Mfr. Part #:
OSG60R099KSZF
Package:
TO-263
Product Description
Product Overview
The OSG60R099KSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. Integrated with a fast recovery diode (FRD), it offers minimized reverse recovery time, making it ideal for resonant switching topologies that demand higher efficiency, reliability, and a smaller form factor. This MOSFET is engineered for demanding applications such as PC power supplies, telecom and server power, EV chargers, and motor drivers.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS Z series
- Technology: Charge Balance Technology
- Diode Type: Fast Recovery Diode (FRD)
- RoHS Compliant: Yes
- Halogen Free: Yes
- Pb Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 650 | V | Tj(max) |
| Pulsed drain current | ID, pulse | 108 | A | TC=25 C |
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 99 | m | VGS=10V |
| Total gate charge | Qg | 66.8 | nC | VGS=10 V, VDS=400 V, ID=20 A |
| Drain-source voltage | VDS | 600 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 36 | A | TC=25 C |
| Continuous drain current (TC=100 C) | ID | 22.8 | A | TC=100 C |
| Continuous diode forward current (TC=25 C) | IS | 36 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, pulse | 108 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 278 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 1000 | mJ | VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 0.45 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Mounted on 1 in 2 FR-4 board with 2oz. Copper, still air environment, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=1 mA |
| Drain-source breakdown voltage (Tj=150 C) | BVDSS | 650 | V | VGS=0 V, ID=1 mA, Tj=150 C |
| Gate threshold voltage | VGS(th) | 3.0 - 4.5 | V | VDS=VGS, ID=1 mA |
| Drain-source on- state resistance | RDS(ON) | 0.082 - 0.099 | VGS=10 V, ID=18 A | |
| Drain-source on- state resistance (Tj=150 C) | RDS(ON) | 0.20 | VGS=10 V, ID=18 A, Tj=150 C | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 10 | A | VDS=600 V, VGS=0 V |
| Gate resistance | RG | 8 | =1 MHz, Open drain | |
| Input capacitance | Ciss | 3917.5 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Output capacitance | Coss | 203.3 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Reverse transfer capacitance | Crss | 9.0 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Turn-on delay time | td(on) | 48.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=20 A |
| Rise time | tr | 77.0 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=20 A |
| Turn-off delay time | td(off) | 90.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=20 A |
| Fall time | tf | 4.6 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=20 A |
| Total gate charge | Qg | 66.8 | nC | VGS=10 V, VDS=400 V, ID=20 A |
| Gate-source charge | Qgs | 16.6 | nC | VGS=10 V, VDS=400 V, ID=20 A |
| Gate-drain charge | Qgd | 28.7 | nC | VGS=10 V, VDS=400 V, ID=20 A |
| Gate plateau voltage | Vplateau | 6.7 | V | VGS=10 V, VDS=400 V, ID=20 A |
| Diode forward voltage | VSD | 1.4 | V | IS=36 A, VGS=0 V |
| Reverse recovery time | trr | 146.5 | ns | IS=20 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.0 | uC | IS=20 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 12.8 | A | IS=20 A, di/dt=100 A/s |
| Product Name | OSG60R099KSZF | TO263 | ||
| Package Marking | OSG60R099KSZ | |||
| Package Type | TO263-J | |||
| Units/Reel | 800 | |||
| Reels / Inner Box | 1 | |||
| Units/ Inner Box | 800 | |||
| Inner Boxes/ Carton Box | 10 | |||
| Units/ Carton Box | 8000 |
2410121716_ORIENTAL-SEMI-OSG60R099KSZF_C5175404.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
