Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R03DF with Low RDS ON and Fast Switching

Name: Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R03DF with Low RDS ON and Fast Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SFS06R03DF
Availability: InStock

Key Attributes

Model Number: SFS06R03DF

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

160A

Operating Temperature -:

-55℃~+175℃

RDS(on):

3.5mΩ@10V

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Reverse Transfer Capacitance (Crss@Vds):

77.7pF

Number:

Output Capacitance(Coss):

1.666nF

Input Capacitance(Ciss):

5.377nF

Pd - Power Dissipation:

168W

Gate Charge(Qg):

66.1nC@10V

Mfr. Part #:

SFS06R03DF

Package:

TO-252

Product Description

Product Overview

The SFS06R03DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

Brand: Oriental Semiconductor
Product Line: FSMOS MOSFET
Channel Type: N-Channel
Enhancement Mode: Yes
RoHS Compliant: Yes
Pb Free: Yes
Halogen Free: Yes

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source voltage (min @ Tj(max))	VDS, min	60	V	Tj(max)
Pulse drain current	ID, pulse	480	A
Drain-source on-state resistance (max @ VGS=10V)	RDS(ON) max	3.5	m	VGS=10V
Total gate charge	Qg	66.1	nC	VGS=10V, VDS=30V, ID=25A
Drain source voltage	VDS	60	V	Tj=25C unless otherwise noted
Gate source voltage	VGS	20	V	Tj=25C unless otherwise noted
Continuous drain current (TC=25 C)	ID	160	A	TC=25 C
Pulsed drain current (TC=25 C)	ID, pulse	480	A	TC=25 C
Power dissipation (TC=25 C)	PD	168	W	TC=25 C
Single pulsed avalanche energy	EAS	200	mJ
Operation and storage temperature	Tstg, Tj	-55 to 175	C
Thermal resistance, junction-case	RJC	0.89	C/W
Thermal resistance, junction-ambient	RJA	62	C/W	Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C
Drain-source breakdown voltage	BVDSS	60	V	VGS=0 V, ID=250 A
Gate threshold voltage	VGS(th)	1.3 - 2.5	V	VDS=VGS, ID=250 A
Drain-source on-state resistance	RDS(ON)	3.0 - 3.5	m	VGS=10 V, ID=20 A
Drain-source on-state resistance	RDS(ON)	3.5 - 4.5	m	VGS=4.5 V, ID=10 A
Gate-source leakage current	IGSS	100	nA	VGS=20 V
Drain-source leakage current	IDSS	1	A	VDS=60 V, VGS=0 V
Input capacitance	Ciss	5377	pF	VGS=0 V, VDS=25 V, =100 kHz
Output capacitance	Coss	1666	pF	VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance	Crss	77.7	pF	VGS=0 V, VDS=25 V, =100 kHz
Turn-on delay time	td(on)	22.5	ns	VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Rise time	tr	6.7	ns	VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Turn-off delay time	td(off)	80.3	ns	VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Fall time	tf	26.8	ns	VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Total gate charge	Qg	66.1	nC	VGS=10 V, VDS=30 V, ID=25 A
Gate-source charge	Qgs	10.7	nC	VGS=10 V, VDS=30 V, ID=25 A
Gate-drain charge	Qgd	10.9	nC	VGS=10 V, VDS=30 V, ID=25 A
Gate plateau voltage	Vplateau	2.9	V	VGS=10 V, VDS=30 V, ID=25 A
Diode forward voltage	VSD	1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr	68.3	ns	VR=30 V, IS=25 A, di/dt=100 A/s
Reverse recovery charge	Qrr	73.0	nC	VR=30 V, IS=25 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	1.9	A	VR=30 V, IS=25 A, di/dt=100 A/s

Package Information (TO252-C):

Symbol	mm Min	mm Nom	mm Max
A	2.20	2.30	2.38
A1	0.00	-	0.20
A2	0.97	1.07	1.17
b	0.68	0.78	0.90
b3	5.20	5.33	5.46
c	0.43	0.53	0.61
D	5.98	6.10	6.22
D1	5.30	-	-
E	6.40	6.60	6.73
E1	4.63	-	-
e	-	2.286 BSC	-
H	9.40	10.10	10.50
L	1.38	1.50	1.75
L1	2.90 REF	-	-
L2	0.51 BSC	-	-
L3	0.88	-	1.28
L4	0.50	-	1.00
	0	-	8

Package Information (TO252-J):

Symbol	mm Min	mm Nom	mm Max
A	2.20	2.30	2.38
A1	0.00	-	0.10
A2	0.90	1.01	1.10
b	0.72	-	0.85
b1	0.71	0.76	0.81
b2	0.72	-	0.90
b3	5.13	5.33	5.46
c	0.47	-	0.60
c1	0.46	0.51	0.56
c2	0.47	-	0.60
D	6.00	6.10	6.20
D1	5.25	-	-
E	6.50	6.60	6.70
E1	4.70	-	-
e	2.186	2.286	2.386
H	9.80	10.10	10.40
L	1.40	1.50	1.70
L1	2.90 REF	-	-
L2	0.508 BSC	-	-
L3	0.90	-	1.25
L4	0.60	0.80	1.00
L5	0.15	-	0.75
L6	1.80 REF	-	-
	0	-	8
1	5	7	9
2	5	7	9

Ordering Information:

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Carton Box	Units/Carton Box
TO252-C	2500	2	5000	5	25000
TO252-J	2500	2	5000	5	25000

2410121617_ORIENTAL-SEMI-SFS06R03DF_C2762912.pdf

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