86--136 6733 2386
quality Simplified Inverter Circuit Design with R O DTC143ZE NPN Transistor Featuring BuiltIn Bias Resistors factory
quality Simplified Inverter Circuit Design with R O DTC143ZE NPN Transistor Featuring BuiltIn Bias Resistors factory

Simplified Inverter Circuit Design with R O DTC143ZE NPN Transistor Featuring BuiltIn Bias Resistors

Key Attributes
Model Number: DTC143ZE
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
6.11kΩ
Number:
1 NPN (Pre-Biased)
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC143ZE
Package:
SOT-523
Product Description

Product Overview

The DTC143ZE is an NPN transistor designed for simplified inverter circuit configurations. It features built-in bias resistors, eliminating the need for external input resistors and allowing for positive input biasing with minimal parasitic effects. This design simplifies device operation by only requiring the setting of on/off conditions, making it ideal for efficient electronic designs. The transistor is housed in a compact SOT-523 package.

Product Attributes

  • Brand: Hongjiacheng Technology
  • Origin: Zhuhai
  • Compliance: RoHS-compliant, halogen-free
  • Flammability Rating: Molding compound meets UL 94V-0

Technical Specifications

Parameter Symbol Condition Unit Min Typ Max
Maximum Ratings (Ta=25 Unless otherwise specified)
Supply Voltage VCC V 50
Input Voltage VIN V -5 +30
Output Current IO mA 100
Peak Collector Current ICM mA 100
Power Dissipation PD mW 150
Storage Temperature Tstg -55 +150
Junction Temperature Tj -55 +150
Small-signal Characteristics (Ta=25 Unless otherwise specified)
Transition frequency fT IO= 5mA, VO= 10V MHz - 250 -
Electrical Characteristics (Ta=25 Unless otherwise noted)
Input voltage (off) VI(off) IO=100A, Vcc=5V V 0.5 - -
Input voltage (on) VI(on) IO=5mA, VO=0.3V V - - 1.3
Output voltage (on) VO(on) IO /II=5mA/0.25mA V - - 0.3
Input current II VI=5V mA - 1.8 -
Output current (off) IO(off) Vcc=50V,VI=0V A - - 0.5
DC Current Gain GI VO=5V, IO=10mA 80 - -
Input resistance R1 k - 3.29 6.11
Resistance ratio R2 /R1 - 8 12
Package Information
Package Type SOT-523
Package Code SOT-523
Unit Weight g 0.0025
Reel Quantity pcs 3000
Box Quantity pcs 15000
Carton Quantity pcs 150000

Note: Dimensions and layout information are provided in the original document and are not fully reproduced here.


2509181520_R-O-DTC143ZE_C51933950.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.