High voltage NPN transistor PANJIT MMBTA06W R1 00001 featuring 225mW power dissipation and lead free design
Key Attributes
Model Number:
MMBTA06W_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA06W_R1_00001
Package:
SOT-323
Product Description
Product Overview
The PMMBTA06W is an NPN silicon planar high voltage transistor designed for various electronic applications. It offers a collector current of up to 500mA and a maximum power dissipation of 225mW. This device is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN silicon, planar design
- Certifications: EU RoHS 2011/65/EU directive, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Units |
|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||
| Collector-Emitter Voltage | VCBO | 80 | V | |
| Collector-Base Voltage | VCEO | 80 | V | |
| Emitter-Base Voltage | VEBO | 4 | V | |
| Collector Current-Continuous | IC | 500 | mA | |
| Maximum Power Dissipation (Note 1) | PD | 225 | mW | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| Typical Junction-to Ambient Thermal Resistance (Note 1) | RJA | 550 | C/W | |
| Electrical Characteristics | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 1mA, IB= 0 | 80 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE= 0 | 80 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= 100A, IC= 0 | 4 | V |
| Collector Cutoff Current | ICBO | VCB= 80V, IE= 0 | 100 | nA |
| Collector Cutoff Current | ICES | VCE= 60V, IB= 0 | 100 | nA |
| DC Current Gain | hFE | VCE= 1V, IC= 10mA | 100 | - |
| DC Current Gain | hFE | VCE= 1V, IC= 100mA | 100 | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=100mA, IB= 10mA | 0.25 | V |
| Base-Emitter Turn-on voltage | VBE(on) | IC=100mA, VCE= 1V | 1.2 | V |
| Current-Gain-Bandwidth Product | fT | IC=10mA, VCE= 2V, f=100MHz | 100 | MHz |
2410121326_PANJIT-MMBTA06W-R1-00001_C268584.pdf
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