General purpose NPN transistor PANJIT MMBT2222AW with 40V breakdown voltage and green molding compound
Key Attributes
Model Number:
MMBT2222AW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2222AW
Package:
SOT-323
Product Description
MMBT2222AW NPN General Purpose Switching Transistor
The MMBT2222AW is an NPN epitaxial silicon planar design transistor suitable for general purpose switching applications. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This product is lead-free, compliant with EU RoHS 2011/65/EU, and uses a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green (molding compound)
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Breakdown Voltage | VCEO | IC=1.0mA, IB=0 | 40 | - | - | V |
| VCBO | IC=10uA, IE=0 | 75 | - | - | V | |
| VEBO | IE=10uA, IC=0 | 6.0 | - | - | V | |
| V(BR)CEO | IC=1.0mA, IB=0 | 40 | - | - | V | |
| Cutoff Current | IBL | VCE=60V, VEB=3.0V | - | - | 20 | nA |
| ICEX | VCE=60V, VEB=3.0V | - | - | 10 | nA | |
| ICBO | VCE=60V, IE=0, TJ=125 OC | - | - | 10 | uA | |
| DC Current Gain | hFE | IC=0.1mA, VCE=10V | 35 | - | - | - |
| hFE | IC=1.0mA, VCE=10V | 50 | - | - | - | |
| hFE | IC=10mA, VCE=10V | 75 | - | - | - | |
| hFE | IC=10mA, VCE=10V,TJ=125 OC | 35 | - | - | - | |
| hFE | IC=150mA, VCE=10V (Note 2) | 100 | - | - | - | |
| hFE | IC=500mA, VCE=10V (Note 2) | 40 | - | - | - | |
| Saturation Voltage | VCE(SAT) | IC=150mA, IB=15mA | - | 0.3 | - | V |
| VBE(SAT) | IC=150mA, IB=15mA | 0.6 | - | - | V | |
| Capacitance | CBO | VCB=10V, IE=0, f=1MHz | - | - | 8.0 | pF |
| EBO | VCB=0.5V, IC=0, f=1MHz | - | - | 25 | pF | |
| Switching Time | td | VCC=3V,VBE=-5V, IC=150mA,IB=15mA | - | - | 10 | ns |
| tr | VCC=3V,VBE=-5V, IC=150mA,IB=15mA | - | - | 25 | ns | |
| ts | VCC=30V,IC=150mA IB1=IB2=15mA | - | - | 225 | ns | |
| tf | VCC=30V,IC=150mA IB1=IB2=15mA | - | - | 60 | ns | |
| Max Power Dissipation | PTOT | (Note 1) | - | - | 150 | mW |
| Thermal Resistance | RJA | - | - | 830 | OC/W | |
| Junction Temperature | TJ | -55 | - | 150 | OC | |
| Storage Temperature | TSTG | -55 | - | 150 | OC |
2410121513_PANJIT-MMBT2222AW_C2892230.pdf
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