Switching Power MOSFET ORIENTAL SEMI OSG65R260FSF NB with Low Switching Loss and Uniform Performance
Key Attributes
Model Number:
OSG65R260FSF_NB
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
2.9V
Reverse Transfer Capacitance (Crss@Vds):
7.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
33W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
OSG65R260FSF_NB
Package:
TO-220F-3
Product Description
Product Overview
The OSG65R260FSF_NB is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. It offers low RDS(on), low gate charge, and fast switching capabilities with excellent avalanche characteristics. This MOSFET is designed for high-efficiency applications such as active power factor correction and switching mode power supplies, including server power supplies and chargers. Its features include extremely low switching loss, excellent stability and uniformity, and ease of driving, making it suitable for hard switching PWM applications.
Product Attributes
- Brand: Oriental Semiconductor
- Technology: GreenMOSTM
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: TO220F
- Certifications: Pb Free, RoHS Compliant, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | Tj=25 unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | |
| Continuous drain current (TC=25 ) | ID | 15 | A | |
| Continuous drain current (TC=100 ) | ID | 9.5 | A | |
| Pulsed drain current (TC=25 ) | ID, pulse | 45 | A | |
| Continuous diode forward current (TC=25 ) | IS | 15 | A | |
| Diode pulsed current (TC=25 ) | IS, pulse | 45 | A | |
| Power dissipation (TC=25 ) | PD | 33 | W | |
| Single pulsed avalanche energy | EAS | 360 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | TstgTj | -55 to 150 | ||
| Drain-source breakdown voltage (Min @ Tjmax) | VDS, min@Tjmax | 700 | V | |
| Pulsed drain current | ID, pulse | 45 | A | |
| RDS(ON) max @ VGS=10 V | RDS(ON), max | 260 | m | |
| Total gate charge | Qg | 26.4 | nC | |
| Thermal resistance, junction-case | RJC | 3.8 | /W | |
| Thermal resistance, junction-ambient | RJA | 62.5 | /W | |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Drain-source breakdown voltage | BVDSS | 700 | V | VGS=0 V, ID=250 A, Tj=150 |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.22 - 0.26 | VGS=10 V, ID=7.5 A | |
| Drain-source on-state resistance | RDS(ON) | 0.54 | VGS=10 V, ID=7.5 A, Tj=150 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Gate resistance | RG | 8.3 | f= 1 MHz, Open drain | |
| Input capacitance | Ciss | 1227 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 100.2 | pF | |
| Reverse transfer capacitance | Crss | 7.1 | pF | |
| Turn-on delay time | td(on) | 24.7 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A |
| Rise time | tr | 7.3 | ns | |
| Turn-off delay time | td(off) | 56.3 | ns | |
| Fall time | tf | 9.5 | ns | |
| Total gate charge | Qg | 26.4 | nC | ID=8 A, VDS=400 V, VGS=10 V |
| Gate-source charge | Qgs | 7.8 | nC | |
| Gate-drain charge | Qgd | 7.9 | nC | |
| Gate plateau voltage | Vplateau | 5.3 | V | |
| Diode forward voltage | VSD | 1.4 | V | IS=15 A, VGS=0 V |
| Reverse recovery time | trr | 292 | ns | VR=400 V, IS=8 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 3.5 | C | |
| Peak reverse recovery current | Irrm | 21.8 | A | |
| Package Outline Dimension A | A | 4.30 - 4.70 | mm | NOM 4.50 |
| Package Outline Dimension b | b | 0.60 - 0.80 | mm | NOM 0.70 |
| Package Outline Dimension b1 | b1 | 0.60 - 0.90 | mm | NOM 0.80 |
| Package Outline Dimension c | c | 0.45 - 0.60 | mm | NOM 0.50 |
| Package Outline Dimension D | D | 14.70 - 15.30 | mm | NOM 15.00 |
| Package Outline Dimension D1 | D1 | 8.50 | mm | REF. |
| Package Outline Dimension E | E | 9.70 - 10.30 | mm | NOM 10.00 |
| Package Outline Dimension F | F | 2.50 - 2.90 | mm | NOM 2.70 |
| Package Outline Dimension G | G | 6.30 - 6.70 | mm | NOM 6.50 |
| Package Outline Dimension L | L | 13.40 - 13.80 | mm | NOM 13.60 |
| Package Outline Dimension L1 | L1 | 1.00 - 1.20 | mm | NOM 1.10 |
| Package Outline Dimension Q | Q | 2.50 - 2.70 | mm | NOM 2.60 |
| Package Outline Dimension Q1 | Q1 | 2.90 - 3.10 | mm | NOM 3.00 |
| Package Outline Dimension R | R | 3.00 - 3.40 | mm | NOM 3.20 |
| Package Outline Dimension SYMBOL | SYMBOL | 2.60 | mm | BSC. |
| Package Outline Dimension SYMBOL | SYMBOL | 3.50 | mm | REF. |
| Ordering Information Package | Package | TO220F | ||
| Ordering Information Units/Tube | Units/Tube | 50 | ||
| Ordering Information Tubes/Inner Box | Tubes/Inner Box | 40 | ||
| Ordering Information Units/Inner Box | Units/Inner Box | 2000 | ||
| Ordering Information Inner Box/Carton Box | Inner Box/Carton Box | 4 | ||
| Ordering Information Units/Carton Box | Units/Carton Box | 8000 |
2411220406_ORIENTAL-SEMI-OSG65R260FSF-NB_C708896.pdf
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