High current conduction MOSFET orisilicon OSM45N10 optimized for load switching and control circuits
Key Attributes
Model Number:
OSM45N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-40℃~+125℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
540pF
Input Capacitance(Ciss):
1.02nF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
OSM45N10
Package:
TO-252
Product Description
Product Overview
This is a channel device in a package that achieves low on-resistance and continuous current at a specific gate-source voltage. It features low gate charge, low gate voltage, and high current conduction capability. Suitable for applications such as load switching and control.
Product Attributes
- Package:
Technical Specifications
| Model | Gate | Drain | Source |
| OSM45N10 XXXXX / 45N10 YMLLL | 1 | 2 | 3 |
2411220032_orisilicon-OSM45N10_C41417376.pdf
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