R O ES1J rectifier featuring glass passivated chip junction and solderable terminals per MIL STD 750
Key Attributes
Model Number:
ES1J
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.7V@1A
Reverse Leakage Current (Ir):
2uA@600V
Current - Rectified:
1A
Mfr. Part #:
ES1J
Package:
SMA(DO-214AC)
Product Description
Product Overview
The ES1A through ES1M series are surface mount fast recovery rectifiers designed for high-frequency rectification and freewheeling applications. These devices feature a low-profile package ideal for automated placement, glass-passivated chip junctions, and super fast reverse recovery times, contributing to low switching losses and high efficiency. They offer high forward surge capability and are suitable for use in switching mode converters and inverters for consumer, computer, automotive, and telecommunication sectors.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Material: Glass passivated pallet chip junction
- Certifications: RoHS-compliant, halogen-free, UL 94V-0 flammability rating
- Case: DO-214AC(SMA)
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
Technical Specifications
| Parameter | Symbol | Unit | ES1A | ES1B | ES1C | ES1D | ES1F | ES1G | ES1H | ES1J | ES1K | ES1M |
| Device marking code | ES1A | ES1B | ES1C | ES1D | ES1F | ES1G | ES1H | ES1J | ES1K | ES1M | ||
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum RMS Voltage | VRMS | V | 35 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | 560 | 700 |
| Maximum DC blocking Voltage | VDC | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 |
| Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 1.0 | |||||||||
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 30.0 | |||||||||
| Storage temperature | Tstg | -55 ~+150 | ||||||||||
| Junction temperature | Tj | -55 ~+150 | ||||||||||
| Typical Thermal Resistance (Junction to Ambient) | RJ-A | /W | 80 | |||||||||
| Typical Thermal Resistance (Junction to Lead) | RJ-L | /W | 35 | |||||||||
| Maximum instantaneous forward voltage (IF=1.0A) | VF | V | 1.0 | 1.3 | 1.7 | |||||||
| Maximum reverse recovery time (IF=0.5A,IR=1.0A,Irr=0.25A) | Trr | ns | 35 | |||||||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=25) | IR1 | A | 2.0 | |||||||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=125) | IR2 | A | 200 | |||||||||
| Typical junction capacitance (4.0V DC, 1MHz) | CJ | pF | 18 | |||||||||
2506261420_R-O-ES1J_C18199159.pdf
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