Low Voltage Trench N Channel MOSFET OSEN OSD90N03T Suitable for DC to DC Converter and Rectification
Key Attributes
Model Number:
OSD90N03T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Input Capacitance(Ciss):
3.2nF
Pd - Power Dissipation:
115W
Output Capacitance(Coss):
375pF
Gate Charge(Qg):
78nC@4.5V
Mfr. Part #:
OSD90N03T
Package:
TO-252
Product Description
OSD90N03T LOW Voltage Trench Nch MOSFET
The OSD90N03T is a Low Voltage Trench N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification applications.
Product Attributes
- Brand: OSEN
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 30 | |||
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | |||
| Drain Current-Continuous (ID) (Note 2) | A | 90 | |||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 360 | |||
| Power Dissipation (PD) (Note 2) | W | 115 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250AVGS=0V | 30 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=1A | -- | 3.3 | -- |
| Gate-Body Leakage Current (IGSS) | nA | VGS=25VVDS=0 | -- | -- | ±100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- | -- | 1 |
| Forward Transconductance (gfs) | S | VDS=10VID=20A | 20 | -- | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (Td(on)) | ns | VGS=10V, VDS=30V,ID=30A RG=1 | -- | 15 | -- |
| Rise Time (Tr) | ns | -- | 13 | -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- | 35 | -- | |
| Fall Time (Tf) | ns | -- | 10 | -- | |
| Total Gate Charge (Qg) | nC | VDS=30VGS=4.5V ID=40A | -- | 78 | -- |
| Gate-Source Charge (Qgs) | nC | -- | 15 | -- | |
| Gate-Drain Charge (Qgd) | nC | -- | 25 | -- | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=20VVGS=0 f=1MHz | -- | 3200 | -- |
| Output Capacitance (Coss) | pF | -- | 375 | -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 60 | -- | |
| Diode Characteristics | |||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 90 | |
| Diode Forward On-Voltage (VSD) | V | IS=40AVGS=0 | -- | -- | 1.2 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 1.09 | |
2504101957_OSEN-OSD90N03T_C45359760.pdf
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