450V N Channel Power MOSFET OSEN OSPF13N45 Designed for Electronic Ballasts and Switch Mode Supplies
Key Attributes
Model Number:
OSPF13N45
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
13A
RDS(on):
360mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Input Capacitance(Ciss):
1.75nF
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
OSPF13N45
Package:
TO-220F
Product Description
Product Overview
The OSPF13N45 is a 450V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Model: OSPF13N45
- Package: TO-220F
Technical Specifications
| Symbol | Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | |||||||
| VDSS | Drain-Source Voltage | V | 450 | ||||
| VGS | Gate-Source Voltage-Continuous | V | ±30 | ||||
| ID | Drain Current-Continuous (Note 2) | A | 13 | ||||
| IDM | Drain Current-Single Pulsed (Note 1) | A | 52 | ||||
| PD | Power Dissipation (Note 2) | W | 50 | ||||
| Tj | Max.Operating junction temperature | 150 | |||||
| Electrical Characteristics | |||||||
| Static Characteristics | |||||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 450 | -- | -- | |
| VGS(th) | Gate Threshold Voltage | V | VDS=VGS, ID=250µA | 2.0 | -- | 4.0 | |
| RDS(on) | Drain-Source On-Resistance | Ω | VGS=10V, ID=6.0A | -- | 0.36 | -- | |
| IGSS | Gate-Body Leakage Current | nA | VGS=±30V, VDS=0 | -- | -- | ±100 | |
| IDSS | Zero Gate Voltage Drain Current | µA | VDS=450V, VGS=0 | -- | -- | 1 | |
| Switching Characteristics | |||||||
| Td(on) | Turn-On Delay Time | ns | VDS=200V, ID=13A, RG=25Ω(Note 2) | -- | 20 | -- | |
| Tr | Rise Time | ns | -- | 28 | -- | ||
| Td(off) | Turn-Off Delay Time | ns | -- | 105 | -- | ||
| Tf | Fall Time | ns | -- | 45 | -- | ||
| Qg | Total Gate Charge | nC | VDS=400, VGS=10V, ID=13A(Note 2) | -- | 25 | 35 | |
| Qgs | Gate-Source Charge | nC | -- | 7.5 | -- | ||
| Qgd | Gate-Drain Charge | nC | -- | 15 | -- | ||
| Dynamic Characteristics | |||||||
| Ciss | Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | -- | 1750 | -- | |
| Coss | Output Capacitance | pF | -- | 155 | -- | ||
| Crss | Reverse Transfer Capacitance | pF | -- | 15 | -- | ||
| Diode Characteristics | |||||||
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | A | -- | -- | 13 | ||
| VSD | Diode Forward On-Voltage | V | IS=13A, VGS=0 | -- | -- | 1.4 | |
| Thermal Characteristics | |||||||
| Rth(j-c) | Thermal Resistance, Junction to Case | °C/W | -- | -- | 2.5 | ||
2410121732_OSEN-OSPF13N45_C20607823.pdf
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