Low On State Resistance MOSFET PANJIT PJA3400 R1 00001 30V N Channel for PWM and Switching Applications
Key Attributes
Model Number:
PJA3400_R1_00001
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
490pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.7nC@15V
Mfr. Part #:
PJA3400_R1_00001
Package:
SOT-23
Product Description
Product Overview
The PPJA3400 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low on-state resistance at various gate-source voltages. This MOSFET is lead-free and compliant with EU RoHS 2011/65/EU, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Package: SOT-23
- Marking: A00
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=4.9A | - | 28 | 38 | m |
| VGS=4.5V, ID=3.5A | - | 32 | 44 | m | ||
| VGS=2.5V, ID=2.7A | - | 45 | 60 | m | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.5 | 0.84 | 1.3 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+12V, VDS=0V | - | +10 | +100 | nA |
| Total Gate Charge | Qg | VDS=15V, ID=4.9A, VGS=10V (Note 1,2) | - | 5.7 | - | nC |
| Gate-Source Charge | Qgs | - | 1.1 | - | ||
| Gate-Drain Charge | Qg | - | 1.5 | - | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHZ | - | 490 | - | pF |
| Output Capacitance | Coss | - | 44 | - | ||
| Reverse Transfer Capacitance | Crss | - | 32 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V, ID=4.9A, VGS=10V, RG=3 (Note 1,2) | - | 2 | - | ns |
| Turn-On Rise Time | tr | - | 57 | - | ||
| Turn-Off Delay Time | td(off) | - | 78 | - | ||
| Turn-Off Fall Time | tf | - | 79 | - | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 1.5 | A | |
| Diode Forward Voltage | VSD | IS=1.0A, VGS=0V | - | 0.77 | 1.2 | V |
| Drain-Source Voltage | VDS | - | - | 30 | V | |
| Gate-Source Voltage | VGS | - | - | +12 | V | |
| Continuous Drain Current | ID | - | - | 4.9 | A | |
| Pulsed Drain Current | IDM | - | - | 19.6 | A | |
| Power Dissipation | PD | Ta=25oC | - | 1.25 | - | W |
| Derate above 25oC | - | 10 | - | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | oC | |
| Typical Thermal resistance - Junction to Ambient (Note 3) | RJA | - | 100 | - | oC/W |
2410121321_PANJIT-PJA3400-R1-00001_C360757.pdf
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