PANJIT PJW4N06A AU 60V N Channel MOSFET with Ultra Low On Resistance and Continuous Drain Current 4A
Key Attributes
Model Number:
PJW4N06A-AU
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
3.7W
Input Capacitance(Ciss):
509pF@15V
Gate Charge(Qg):
5.1nC
Mfr. Part #:
PJW4N06A-AU
Package:
SOT-223
Product Description
Product Overview
The PPJW4N06A-AU is a 60V N-Channel Enhancement Mode MOSFET designed for various applications. It features an advanced trench process technology and a high-density cell design for ultra-low on-resistance, making it suitable for power management solutions. This AEC-Q101 qualified component is compliant with EU RoHS 2.0 and uses a green molding compound, ensuring environmental responsibility.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 standard (Green molding compound)
- Package: SOT-223
- Material: Lead free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current (Note 4) | ID | TA=25C | 4 | A | ||
| Continuous Drain Current (Note 4) | ID | TA=70C | 3.2 | A | ||
| Pulsed Drain Current (Note 1) | IDM | 8 | A | |||
| Power Dissipation (Note 4,5) | PD | TA=25C | 3.7 | W | ||
| Power Dissipation (Note 4,5) | PD | TA=70C | 2.6 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | C | ||
| Typical Thermal Resistance - Junction to Ambient (Note 4,5) | RJA | 40.3 | C/W | |||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.86 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=3A | 85 | 100 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=2A | 95 | 110 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | +100 | nA | ||
| Total Gate Charge | Qg | VDS=48V, ID=3A, VGS=4.5V (Note 2,3) | 5.1 | nC | ||
| Gate-Source Charge | Qgs | VDS=48V, ID=3A, VGS=4.5V (Note 2,3) | 1.2 | nC | ||
| Gate-Drain Charge | Qg | VDS=48V, ID=3A, VGS=4.5V (Note 2,3) | 1.9 | nC | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHZ | 509 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHZ | 39 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHZ | 26 | pF | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=3A, VGS=10V, RG=3.3 (Note 2,3) | 1.6 | ns | ||
| Turn-On Rise Time | tr | VDD=30V, ID=3A, VGS=10V, RG=3.3 (Note 2,3) | 7.3 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=30V, ID=3A, VGS=10V, RG=3.3 (Note 2,3) | 25 | ns | ||
| Turn-Off Fall Time | tf | VDD=30V, ID=3A, VGS=10V, RG=3.3 (Note 2,3) | 14 | ns | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | |||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.8 | 1.2 | V |
2410121326_PANJIT-PJW4N06A-AU_C2844884.pdf
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