P Channel Enhancement Mode Power MOSFET Paker SI2333 with Ultra Low On Resistance and SOT 23 Package
Key Attributes
Model Number:
SI2333
Product Custom Attributes
Drain To Source Voltage:
15V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-
RDS(on):
23mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
105pF@9V
Number:
1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.015nF@9V
Gate Charge(Qg):
11.3nC
Mfr. Part #:
SI2333
Package:
SOT-23
Product Description
SI2333 P-Channel Enhancement Mode Power MOSFET
The SI2333 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Certifications: UL:94-V-0, Halogen free, RoHS compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics | |||||
| VGS | Gate-Source Voltage | - | - | ±8 | V |
| ID | Drain-Source Breakdown Voltage | -18 | -20 | - | V |
| IDSS | Zero Gate Voltage Drain Current | - | - | -1 | uA |
| IGSS | Gate-Body Leakage Current | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Drain-Source On-State Resistance | - | 23 | 28 | m |
| RDS(on) | Drain-Source On-State Resistance | - | 33 | 40 | m |
| RDS(on) | Drain-Source On-State Resistance | - | 48 | 63 | m |
| Electrical Characteristics | |||||
| CISS | Input Capacitance | - | 1015 | - | pF |
| COSS | Output Capacitance | - | 138 | - | pF |
| CRSS | Reverse Transfer Capacitance | - | 105 | - | pF |
| Qg | Total Gate Charge | - | 11.3 | - | nC |
| Qgs | Gate Source Charge | - | 2.3 | - | nC |
| Qgd | Gate Drain Charge | - | 2.4 | - | nC |
| td(on) | Turn-on Delay Time | - | 8.5 | - | nS |
| tr | Turn-on Rise Time | - | 35.5 | - | nS |
| td(off) | Turn-Off Delay Time | - | 78 | - | nS |
| tf | Turn-Off Fall Time | - | 58 | - | nS |
| VSD | Forward on voltage | - | - | -1.2 | V |
| Source-Drain Diode Characteristics | |||||
| IS | Diode Continuous Forward Current | - | -6.0 | - | A |
| IDM | Pulse Drain Current | - | -25 | - | A |
| ID | Continuous Drain Current@GS=10V | - | -6.0 | - | A |
| PD | Maximum Power Dissipation | - | 1.5 | - | W |
| RJA | Thermal Resistance Junction-to-Ambient | - | 105 | - | C/W |
| TJ | Maximum Junction Temperature | - | 150 | - | C |
| TSTG | Storage Temperature Range | -55 | - | 150 | C |
2410122024_PAKER-SI2333_C5278894.pdf
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