Compact SOT23 Package PAKER BSN20 NChannel Enhancement Mode Power MOSFET with Ultra Low On Resistance
Key Attributes
Model Number:
BSN20
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
4Ω@4.5V,0.1A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
3pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
42pF@25V
Gate Charge(Qg):
7nC@10V
Mfr. Part #:
BSN20
Package:
SOT-23
Product Description
Product Overview
The BSN20 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a compact SOT-23 small outline plastic package. This RoHS compliant and halogen-free component is ideal for various electronic applications requiring efficient power management.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: (Shenzhen)
- Material: Epoxy UL: 94V-0
- Certifications: Halogen free and RoHS compliant
- Package: SOT-23 Small Outline Plastic Package
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VGS=4.5VID=0.1A | 50 | V | ||
| Zero Gate Voltage Drain Current | VDS=50VVGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | VGS=20VVDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VDS=VGSID=250A | 0.4 | 0.67 | 1.5 | V |
| Drain-Source On-State Resistance | VGS=10VID=0.3A | 1.3 | 3 | ||
| Drain-Source On-State Resistance | VGS=4.5VID=0.1A | 1.5 | 4 | ||
| Input Capacitance | VDS=25VVGS=0V f=1MHz | 42 | pF | ||
| Output Capacitance | VDS=25VVGS=0V f=1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | VDS=25VVGS=0V f=1MHz | 3 | pF | ||
| Total Gate Charge | VDS=25VID=0.1A VGS=10V | 7 | nC | ||
| Gate Source Charge | VDS=25VID=0.1A VGS=10V | 1.8 | nC | ||
| Gate Drain Charge | VDS=25VID=0.1A VGS=10V | 0.6 | nC | ||
| Turn-on Delay Time | VDS=30VID=0.1A VGS=10V RG=6 | 4.6 | nS | ||
| Turn-on Rise Time | VDS=30VID=0.1A VGS=10V RG=6 | 6.8 | nS | ||
| Turn-off Delay Time | VDS=30VID=0.1A VGS=10V RG=6 | 19 | nS | ||
| Turn-off Fall Time | VDS=30VID=0.1A VGS=10V RG=6 | 11.5 | nS | ||
| Forward on voltage | Tj=25Is=0.1A | 0.8 | 1.2 | V | |
| Gate-Source Voltage | 20 | V | |||
| Diode Continuous Forward Current | Tc=25C | 0.1 | A | ||
| Drain-Source Breakdown Voltage | 50 | V | |||
| Maximum Junction Temperature | 150 | C | |||
| Storage Temperature Range | -50 | 155 | C | ||
| Pulse Drain Current | Tested Tc=25C | 0.8 | A | ||
| Continuous Drain Current@GS=10V | Tc=25C | 0.1 | A | ||
| Maximum Power Dissipation | Tc=25C | 0.35 | W | ||
| Thermal Resistance Junction-to-Ambient | @ Steady State | 350 | C/W |
2410122013_PAKER-BSN20_C5278903.pdf
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