Low On Resistance MOSFET PANJIT PJC7401 R1 00001 30V P Channel Enhancement Mode with RoHS Compliance
Key Attributes
Model Number:
PJC7401_R1_00001
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 P-Channel
Output Capacitance(Coss):
38pF
Input Capacitance(Ciss):
443pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
PJC7401_R1_00001
Package:
SOT-323
Product Description
Product Overview
The PPJC7401 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low on-state resistance at various gate-source voltages. This device is lead-free and manufactured with a green molding compound, complying with EU RoHS 2.0 and IEC 61249 standards.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-323
- Certifications: EU RoHS 2.0, IEC 61249 standard
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | +12 | V | |||
| Continuous Drain Current | ID | -1.5 | A | |||
| Pulsed Drain Current | IDM | -6 | A | |||
| Power Dissipation | PD | Ta=25 | 350 | mW | ||
| Derate above 25 | 2.8 | mW/C | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.5 | -0.96 | -1.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-1.5A | 105 | 115 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-1.1A | 115 | 130 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-2.5V, ID=-0.6A | 145 | 180 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -0.01 | -1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=+12V, VDS=0V | +10 | +100 | nA | |
| Total Gate Charge | Qg | VDS=-15V, ID=-1.5A, VGS=-10V (Note 1,2) | 11 | nC | ||
| Gate-Source Charge | Qgs | 0.85 | ||||
| Gate-Drain Charge | Qg d | 1.4 | ||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHZ | 443 | pF | ||
| Output Capacitance | Coss | 38 | ||||
| Reverse Transfer Capacitance | Crss | 25 | ||||
| Turn-On Delay Time | td(on) | VDD=-15V, ID=-1.5A, VGS=-10V, RG=6 (Note 1,2) | 2.5 | ns | ||
| Turn-On Rise Time | tr | 32 | ||||
| Turn-Off Delay Time | td(off) | 161 | ||||
| Turn-Off Fall Time | tf | 73 | ||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.5 | A | |||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.79 | -1.2 | V | |
| Approx. Weight | 0.005 | grams | ||||
| Marking | C01 |
2410121332_PANJIT-PJC7401-R1-00001_C391640.pdf
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