High Density Mounting PNP Dual Bipolar Transistor PANASONIC CPH6531-TL-E for Relay and Motor Drivers

Key Attributes
Model Number: CPH6531-TL-E
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.1W
Transition Frequency(fT):
420MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
CPH6531-TL-E
Package:
CPH-6
Product Description

Product Overview

The CPH6531 is a PNP dual bipolar transistor designed for high-density mounting in a compact CPH6 package. It offers low VCE(sat) and is suitable for applications such as relay drivers, lamp drivers, motor drivers, and flash memory drivers. The device features two PNP transistors equivalent to the CPH3116, enabling small and slim applied sets.

Product Attributes

  • Brand: onsemi
  • Package Type: CPH6
  • JEITA/JEDEC Standards: SC-74, SOT-26, SOT-457
  • Material: Semiconductor Components
  • Origin: USA (implied by onsemi.com and Semiconductor Components Industries, LLC)
  • Certifications: Pb Free (indicated in ordering information)

Technical Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO -50 V
Collector-to-Emitter Voltage VCES -50 V
Collector-to-Emitter Voltage VCEO -50 V
Emitter-to-Base Voltage VEBO -5 V
Collector Current IC -1.0 A
Collector Current (Pulse) ICP -2 A
Base Current IB -200 mA
Collector Dissipation (1 unit, mounted on ceramic substrate 600mm 0.8mm) PC 0.9 W
Total Power Dissipation (mounted on ceramic substrate 600mm 0.8mm) PT 1.1 W
Junction Temperature Tj 150 C
Storage Temperature Tstg -55 to +150 C
Collector Cutoff Current ICBO VCB= -40V, IE=0A -0.1 A
Emitter Cutoff Current IEBO VEB= -4V, IC=0A -0.1 A
DC Current Gain hFE VCE= -2V, IC= -100mA 200 - 560
Gain-Bandwidth Product fT VCE= -10V, IC= -300mA 420 MHz
Output Capacitance Cob VCB= -10V, f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat)1 IC= -500mA, IB= -10mA -230 -380 mV
Collector-to-Emitter Saturation Voltage VCE(sat)2 IC= -300mA, IB= -6mA -125 -200 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= -500mA, IB= -10mA -0.81 -1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC= -10A, IE=0A -50 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC= -100A, RBE=0 -50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= -1mA, RBE= -50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE= -10A, IC=0A -5 V
Turn-On Time ton See specified Test Circuit 35 ns
Storage Time tstg 170 ns
Fall Time tf 30 ns
Package Dimensions 2.9 x 1.6 x 0.95 (typ) mm
Mass 0.015 (typ) g
Minimum Packing Quantity 3,000 pcs./reel

Ordering Information

Device Package Shipping Memo
CPH6531-TL-E CPH6 3,000pcs./reel, Pb Free

2411200148_PANASONIC-CPH6531-TL-E_C17405379.pdf

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