Switch Load MOSFET PANJIT PJA3413 AU R1 000A1 20V P Channel with Low On Resistance and RoHS 2 0 Compliance
Key Attributes
Model Number:
PJA3413-AU_R1_000A1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.4A
RDS(on):
146mΩ@1.8V,1.2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
40pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
522pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
PJA3413-AU_R1_000A1
Package:
SOT-23
Product Description
Product Overview
The PJA3413-AU is a 20V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0 and IEC 61249 standards. This MOSFET offers low on-state resistance at various gate-source voltages, making it suitable for demanding applications.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units | |
| Drain-Source Voltage | VDS | -20 | V | ||||
| Gate-Source Voltage | VGS | +12 | V | ||||
| Continuous Drain Current | ID | Note 4 | -3.4 | A | |||
| Pulsed Drain Current | IDM | Note 1 | -13.6 | A | |||
| Power Dissipation | PD | Ta=25oC | 1.25 | W | |||
| Derate above 25oC | 10 | mW/ oC | |||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | |||
| Typical Thermal Resistance - Junction to Ambient | RJA | Note 3,4 | 100 | oC/W | |||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.4 | -0.65 | -1.2 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-3.4A | 65 | 82 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS=-2.5V, ID=-2.2A | 82 | 110 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS=-1.8V, ID=-1.2A | 103 | 146 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | |||
| Gate-Source Leakage Current | IGSS | VGS=+12V, VDS=0V | +100 | nA | |||
| Total Gate Charge | Qg | VDS=-10V, ID=-3.4A, VGS=-4.5V(Note 1,2) | 7 | nC | |||
| Gate-Source Charge | Qgs | 1 | |||||
| Gate-Drain Charge | Qg d | 1.8 | |||||
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHZ | 522 | pF | |||
| Output Capacitance | Coss | 55 | |||||
| Reverse Transfer Capacitance | Crss | 40 | |||||
| Turn-On Delay Time | td(on) | VDD=-10V, ID=-3.4A, VGS=-4.5V, RG=6(Note 1,2) | 10 | ns | |||
| Turn-On Rise Time | tr | 4 | |||||
| Turn-Off Delay Time | td(off) | 34 | |||||
| Turn-Off Fall Time | tf | 5 | |||||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | -1.5 | A | ||||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.77 | -1.2 | V |
2410121326_PANJIT-PJA3413-AU-R1-000A1_C4555446.pdf
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