Electrically isolated dual transistor pairs NPN PNP PANJIT BC847BPN R1 00001 surface mount package
Key Attributes
Model Number:
BC847BPN_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847BPN_R1_00001
Package:
SOT-363
Product Description
BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)
The BC847BPN is a dual surface mount transistor package containing two electrically-isolated complimentary NPN and PNP general-purpose transistors. This device is ideal for portable applications where board space is at a premium.
Product Attributes
- Brand: Panjit
- Certifications: EU RoHS 2.0, IEC 61249 standard
- Material: Green molding compound
- Type: Electrically-Isolated Complimentary Transistor Pairs
Technical Specifications
| Parameter | NPN Symbol | Value | Units | PNP Symbol | Value | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | VCBO | -50 | V |
| Collector-Emitter Voltage | VCEO | 45 | V | VCEO | -45 | V |
| Emitter-Base Voltage | VEBO | 6.0 | mA | VEBO | -5.0 | mA |
| Collector Current | IC | 100 | mA | IC | -100 | mA |
| Total Power Dissipation | PD | 200 | mW | PD | 200 | mW |
| Operating Junction Temperature Range | TJ | -55 to +150 | C | TJ | -55 to +150 | C |
| Storage Temperature Range | Tstg | -55 to +150 | C | Tstg | -55 to +150 | C |
| Thermal Resistance, Junction to Ambient | Rthja | 556 | C/W | Rthja | 556 | C/W |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | V(BR)CEO | -45 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | V(BR)CBO | -50 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | V | V(BR)EBO | -5.0 | V |
| Collector Cutoff Current | ICBO | 5 | uA | ICBO | -5.0 | uA |
| Emitter Cutoff Current | IEBO | 100 | nA | IEBO | -100 | nA |
| DC Current Gain | hFE | 200 - 450 | - | hFE | 200 - 475 | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.4 | V | VCE(SAT) | -0.65 | V |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.75 | V | VBE(SAT) | -0.7 | V |
| Base-Emitter Voltage | VBE | 0.7 | V | VBE | -0.75 | V |
| Gain-Bandwidth Product | fT | 100 | MHz | fT | 100 | MHz |
| Collector-Base Capacitance | CCB | 1.5 | pF | CCB | 4.5 | pF |
| Emitter-Base Capacitance | CEB | 7 | pF | CEB | 11 | pF |
Applications
General Purpose Amplifier Applications, Hand-Held Computers, PDAs.
2410010102_PANJIT-BC847BPN-R1-00001_C313510.pdf
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