60V P Channel Enhancement Mode MOSFET PANJIT PJA3463 R1 00001 designed for switching and load control
Key Attributes
Model Number:
PJA3463_R1_00001
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
110mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 P-Channel
Input Capacitance(Ciss):
785pF@30V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
PJA3463_R1_00001
Package:
SOT-23
Product Description
Product Overview
The 60V P-Channel Enhancement Mode MOSFET, PJA3463, is designed for efficient load switching and PWM applications. It features advanced trench process technology, offering low on-resistance at various current and voltage levels. This RoHS 2.0 compliant and green molding compound product is suitable for applications requiring reliable switching performance.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2.0, IEC 61249 (Green molding compound)
- Compliance: Lead free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | VGS=0V, ID=-250uA | -60 | - | - | V |
| VGS=0V | -60 | - | - | V | ||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current (Note 4) | ID | Ta=25oC | - | - | -2.5 | A |
| Pulsed Drain Current (Note 1) | IDM | - | - | -10 | A | |
| Power Dissipation | PD | Ta=25oC | - | - | 1.25 | W |
| Derate above 25oC | - | - | 10 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Typical Thermal Resistance - Junction to Ambient (Note 3) | RJA | - | 100 | oC/W | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | - | -1 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-2.5A | - | 87 | 110 | m |
| VGS=-4.5V, ID=-1.5A | - | 110 | 130 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +100 | nA |
| Total Gate Charge | Qg | VDS=-30V, ID=-3A, VGS=-10V (Note 1,2) | - | 10 | - | nC |
| Gate-Source Charge | Qgs | - | 1.6 | - | ||
| Gate-Drain Charge | Qg d | - | 3 | - | ||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHZ | - | 785 | - | pF |
| Output Capacitance | Coss | - | 175 | - | ||
| Reverse Transfer Capacitance | Crss | - | 112 | - | ||
| Turn-On Delay Time | td(on) | VDS=-30V, RL=30 VGS=-10V, RG=6.2 (Note 1,2) | - | 8 | - | ns |
| Turn-On Rise Time | tr | - | 15 | - | ||
| Turn-Off Delay Time | td(off) | - | 43 | - | ||
| Turn-Off Fall Time | tf | - | 8.4 | - | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | -1.5 | A | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | - | -0.75 | -1 | V |
2411220215_PANJIT-PJA3463-R1-00001_C7026694.pdf
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