Power MOSFET PJSEMI PJM01N20KDC N Channel with 20V Drain Source Voltage and ESD Protection up to 2KV
Key Attributes
Model Number:
PJM01N20KDC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-
RDS(on):
700mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
56pF
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
PJM01N20KDC
Package:
DFN-3L(1x0.6)
Product Description
Product Overview
The PJM01N20KDC is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi. It features low gate charge and RDS(ON), ESD protection up to 2KV, and is designed for applications such as load switches and PWM applications, as well as general power management. With a VDS of 20V and ID of 0.8A, it offers RDS(on) < 310m @VGS=4.5V.
Product Attributes
- Brand: Pingjingsemi
- Model: PJM01N20KDC
- Package: DFN1x0.6-3L
- Marking Code: JN
- Certifications: ESD protected (HBM) up to 2KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 0.8 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 3.2 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 357 | °°C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | -- | -- | ±10 | μA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.35 | 0.75 | 1.1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=0.6A | -- | 180 | 300 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=0.5A | -- | 260 | 350 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=1.8V,ID=0.2A | -- | 415 | 700 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=0.5A | -- | 2 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 56 | -- | pF |
| Output Capacitance | Coss | -- | 20 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 2.5 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=0.5A, VGS=4.5V,RG=10Ω | -- | 2 | -- | nS |
| Turn-on Rise Time | tr | -- | 18.8 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |
| Turn-off Fall Time | tf | -- | 23 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=0.5A, VGS=4.5V | -- | 1 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.28 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 0.22 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=0.8A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 0.8 | A |
2410122027_PJSEMI-PJM01N20KDC_C2981470.pdf
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