Power MOSFET PJSEMI PJM15N30DF Featuring 30V VDS and 15A Drain Current for Load Switch Applications

Key Attributes
Model Number: PJM15N30DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.29nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
PJM15N30DF
Package:
DFN2x2-6L
Product Description

Product Overview

The PJM15N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switch, PWM applications, and power management, offering a VDS of 30V and an ID of 15A with low RDS(on) values.

Product Attributes

  • Brand: PingJingSemi
  • Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
  • Moisture Sensitivity Level: 1

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V,ID=250A30----V
Zero Gate Voltage Drain CurrentIDSSVDS=30V,VGS=0V----1A
Gate-Body Leakage CurrentIGSSVGS=20V,VDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250A11.62.5V
Drain-Source On-ResistanceRDS(on)VGS=10V,ID=11A--7.512m
Drain-Source On-ResistanceRDS(on)VGS=4.5V,ID=10A--1216m
Forward TransconductancegFSVDS=5V,ID=1A--6--S
Input CapacitanceCissVDS=15V,VGS=0V,f=1MHz--1290--pF
Output CapacitanceCossVDS=15V,VGS=0V,f=1MHz--166--pF
Reverse Transfer CapacitanceCrssVDS=15V,VGS=0V,f=1MHz--135--pF
Total Gate ChargeQgVDS=15V,ID=10A, VGS=10V--19--nC
Gate-Source ChargeQgsVDS=15V,ID=10A, VGS=10V--6.3--nC
Gate-Drain ChargeQgVDS=15V,ID=10A, VGS=10V--4.5--nC
Turn-on Delay Timetd(on)VDD=15V, ID=10A, VGS=10V, RGEN=3--6--nS
Turn-on Rise TimetrVDD=15V, ID=10A, VGS=10V, RGEN=3--5--nS
Turn-off Delay Timetd(off)VDD=15V, ID=10A, VGS=10V, RGEN=3--25--nS
Turn-off Fall TimetfVDD=15V, ID=10A, VGS=10V, RGEN=3--7--nS
Diode Forward VoltageVSDVGS=0V,IS=15A----1.2V
Diode Forward CurrentISVGS=0V,IS=15A----15A
Gate ResistanceRgVDS=-0V,VGS=0V,f=1MHz--1.65--

2410122027_PJSEMI-PJM15N30DF_C30187481.pdf

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