Low RDS on Power MOSFET PJSEMI PJM10H03NSC with 3A Continuous Current and Excellent Heat Dissipation
Key Attributes
Model Number:
PJM10H03NSC
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
650pF@50V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
PJM10H03NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM10H03NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include a VDS of 100V and a continuous ID of 3A, with RDS(ON) as low as 136m (Typ.) at VGS = 10V.
Product Attributes
- Brand: Pingjingsemi
- Model: PJM10H03NSC
- Type: N-Channel Enhancement Mode Power MOSFET
- Package: SOT-23-3
- Applications: Power switching application, Uninterruptible power supply
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 3 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | 150 | |||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 83 | /W | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1 | 1.5 | 2.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | Note3, VGS=10V, ID=3A | - | 136 | 160 | m |
| Note3, VGS=4.5V, ID=3A | - | 140 | 170 | m | ||
| Forward Transconductance | gFS | Note3, VDS=5V,ID=3A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V, f=1.0MHz | - | 650 | - | pF |
| Output Capacitance | Coss | - | 24 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 20 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,RL=19, VGS=10V RG=3 | - | 6 | - | nS |
| Turn-on Rise Time | tr | - | 4 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 20 | - | nS | |
| Turn-Off Fall Time | tf | - | 4 | - | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=3A, VGS=10V | - | 20 | - | nC |
| Gate-Source Charge | Qgs | - | 2.1 | - | nC | |
| Gate-Drain Charge | Qg d | - | 3.3 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V, IS=3A | - | - | 1.2 | V |
| Diode Forward Current | IS | Note2 | - | - | 3 | A |
2108271130_PJSEMI-PJM10H03NSC_C2891566.pdf
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