Fast Reverse Recovery Silicon Diode PJSEMI 1N4148WB Ideal for Automated Placement and RoHS Compliant
Key Attributes
Model Number:
1N4148WB
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4148WB
Package:
SOD-323W
Product Description
Product Overview
The 1N4148WB is a Silicon Epitaxial Planar Switching Diode designed for surface mount applications. It features a glass-passivated chip junction, making it ideal for automated placement. This diode offers a fast reverse recovery time and complies with the EU RoHS 2011/65/EU directive, making it a lead-free component.
Product Attributes
- Brand: Pingjing Semiconductor (derived from www.pingjingsemi.com)
- Material: Silicon Epitaxial Planar
- Certifications: EU RoHS 2011/65/EU directive compliance
Technical Specifications
| Parameter | Symbol | 1N4148WB | Unit |
| Absolute Maximum Ratings (at TA = 25 ) | |||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V |
| Maximum RMS voltage | VRMS | 75 | V |
| Average Rectified Forward Current | IF(AV) | 150 | mA |
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A |
| Non-repetitive Peak Forward Surge Current (at t = 1 ms) | 1 | ||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | 4 | ||
| Maximum Power Dissipation | PD | 400 | mW |
| Operating Temperature | TJ | 150 | C |
| Storage Temperature Range | TSTG | -55 to +150 | C |
| Characteristics (at TA = 25 ) | |||
| Reverse Breakdown Voltage (at IR = 1 A) | V(BR)R | 75 | V |
| Maximum Forward Voltage (at IF = 1 mA) | VF | 0.715 | V |
| Maximum Forward Voltage (at IF = 10 mA) | 0.855 | ||
| Maximum Forward Voltage (at IF = 50 mA) | 1.00 | ||
| Maximum Forward Voltage (at IF = 150 mA) | 1.25 | ||
| Peak Reverse Current (at VR = 20 V,TJ = 25 C) | IR | 0.025 | A |
| Peak Reverse Current (at VR = 75 V,TJ = 25 C) | 1 | ||
| Peak Reverse Current (at VR = 25 V,TJ = 150 C) | 30 | ||
| Peak Reverse Current (at VR = 75 V,TJ = 150 C) | 50 | ||
| Typical Junction Capacitance (at VR = 0 V, f = 1 MHz) | Cj | 2 | pF |
| Reverse Recovery Time (at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 ) | Trr | 4 | nS |
2202211730_PJSEMI-1N4148WB_C2977360.pdf
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