Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design
Key Attributes
Model Number:
RSS08065F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
105A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.3V@10A
Reverse Leakage Current (Ir):
20uA@650V
Current - Rectified:
8A
Mfr. Part #:
RSS08065F
Package:
TO-220F
Product Description
Product Overview
The RSS08065F is a Silicon Carbide Schottky Diode designed for applications such as Power Factor Correction, Server Mode Power Supplies, and Uninterruptible Power Supplies. It features low forward voltage drop, high-speed switching, and a positive temperature coefficient, ensuring temperature-independent switching behavior.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Package: TO-220F
Technical Specifications
| Part Number | Package | Marking | Packing | Qty. | VRRM (V) | IF (A) @ TC=120 | QC (nC) |
| RSS08065F | TO-220F | RSS08065F | Tube | 50 PCS | 650 | 8 | 28 |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VR | DC Blocking Voltage | 650 | V | ||
| IF | Forward Current | 8 | A | TC = 120 | |
| IFSM | Non-Repetitive Forward Surge Current | 105 | A | TC = 25, tp = 10ms Half Sine Wave | |
| IF,Max | Non-Repetitive Peak Forward Surge Current | 840 | A | TC=25C, tP= 10 s, Pulse | |
| IFRM | Repetitive Peak Forward Surge Current | 80 | A | TC = 25, tp = 10ms Half Sine Wave | |
| Ptot | Power Dissipation | 55.6 / 24.1 | W | TC = 25 / TC = 110 | |
| TC | Maximum Case Temperature | 153 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 |
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
| VF | Forward Voltage | 1.3 / 1.6 | 1.75 / 2.0 | V | IF = 10A, TJ = 25 / IF = 10A, TJ = 175 | |
| IR | Reverse Current | 1 / 20 | 20 / 200 | A | VR = 650V, TJ = 25 / VR = 650V, TJ = 175 | |
| C | Total Capacitance | 550 / 53 / 48 | pF | VR=0V, TJ = 25, f=1MHz / VR=200V, TJ = 25, f=1MHz / VR=400V, TJ = 25, f = 1MHz | ||
| QC | Total Capacitive Charge | 28 | nC | VR =400V,IF=10A,TJ = 25 | Qc= 0 VR C V dV Ec | |
| Ec | Capacitance Stored Energy | 7.0 | J | VR =400V |
| Symbol | Parameter | Typ. | Unit | Note |
| RJC | Thermal Resistance from Junction to Case | 2.7 | /W |
2509121150_REASUNOS-RSS08065F_C51904690.pdf
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