N Channel Enhancement Mode MOSFET with Integrated PNP Transistor PJSEMI PJMT23DFA in DFN2x2A 6L Package
Key Attributes
Model Number:
PJMT23DFA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
300mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
56pF@10V
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
PJMT23DFA
Package:
DFN2x2A-6L
Product Description
Product Overview
The PJMT23DFA is an N-Channel Enhancement Mode MOSFET with an integrated PNP Transistor, designed for surface mount applications. It features ESD protection up to 2KV (HBM) and is available in a compact DFN2x2A-6L package. This device is suitable for Li-Battery charging and other power management applications in portable devices.
Product Attributes
- Brand: PingJingSemi
- Package Type: DFN2x2A-6L
- Marking Code: 720
- Certifications: ESD Protected (HBM) up to 2KV
Technical Specifications
| Parameter | Symbol | N-MOS Test Condition | Min. | Typ. | Max. | Unit | PNP Transistor Test Condition | Min. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A | ||||
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | -- | -- | 10 | A | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.35 | 0.75 | 1.1 | V | ||||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=0.6A | -- | 180 | 300 | m | ||||
| VGS=2.5V,ID=0.5A | -- | 260 | 350 | m | ||||||
| Forward Transconductance | gFS | VDS=5V,ID=0.5A | -- | 2 | -- | S | ||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 56 | -- | pF | ||||
| Output Capacitance | Coss | -- | 20 | -- | pF | |||||
| Reverse Transfer Capacitance | Crss | -- | 2.5 | -- | pF | |||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=0.5A, VGS=4.5V,RG=10 | -- | 2 | -- | nS | ||||
| Turn-on Rise Time | tr | -- | 18.8 | -- | nS | |||||
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |||||
| Turn-off Fall Time | tf | -- | 23 | -- | nS | |||||
| Total Gate Charge | Qg | VDS=10V,ID=0.5A, VGS=4.5V | -- | 1 | -- | nC | ||||
| Gate-Source Charge | Qgs | -- | 0.28 | -- | nC | |||||
| Gate-Drain Charge | Qg | -- | 0.22 | -- | nC | |||||
| Diode Forward Voltage | VSD | VGS=0V,IS=0.8A | -- | -- | 1.2 | V | ||||
| Diode Forward Current | IS | -- | -- | 0.8 | A | |||||
| DC Current Gain | HFE | 100 | 360 | -- | VCE = -2 V, IC = -500 mA | |||||
| Collector Base Cutoff Current | -ICBO | -- | 100 | nA | VCB = -35 V | |||||
| Base Base Cutoff Current | -IEBO | -- | 100 | nA | VEB = -6 V | |||||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | -- | -- | V | IC = -100 A | ||||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 25 | -- | -- | V | IC = -2 mA | ||||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 | -- | -- | V | IE = -100 A | ||||
| Collector Emitter Saturation Voltage | -VCE(sat) | -- | -- | 0.5 | V | IC = -800 mA, IB = -80 mA | ||||
| Base Emitter Saturation Voltage | -VBE(sat) | -- | -- | 1.2 | V | IC = -800 mA, IB = -80 mA | ||||
| Base Emitter On Voltage | -VBE(on) | -- | -- | 1 | V | VCE = -1 V, IC = -10 mA | ||||
| Transition Frequency | FT | 120 | -- | -- | MHz | VCE = -10 V, IC = -50 mA |
2406251631_PJSEMI-PJMT23DFA_C22470329.pdf
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