N channel MOSFET PJSEMI PJM139NSA offering rugged design low gate charge and ESD protection ideal for battery powered devices
Key Attributes
Model Number:
PJM139NSA
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
500mA
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
26.5pF@25V
Pd - Power Dissipation:
350mW
Mfr. Part #:
PJM139NSA
Package:
SOT-23
Product Description
Product Overview
The PJM139NSA is an N-Channel Enhancement Mode Power MOSFET designed for rugged and reliable performance. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications requiring direct logic-level interface with TTL/CMOS, such as solid-state relays and battery-operated systems.
Product Attributes
- Brand: PJM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 50 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 0.5 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature Range | TSTG | -55 | +150 | ℃ | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note1 | 357 | ℃/W | ||
| Electrical Characteristics (Ta=25℃ unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 50 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | 0.5 | μA | ||
| VDS=30V,VGS=0V | 100 | nA | ||||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±10 | μA | ||
| Gate Threshold Voltage | VGS(th) | Note2, VDS=VGS,ID=250μA | 0.6 | 1 | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=10V,ID=0.5A | 1.1 | 3 | Ω | |
| Note2, VGS=4.5V,ID=0.2A | 1.2 | 4 | Ω | |||
| Forward Transconductance | gFS | Note2, VDS=10V,ID=0.22A | 1.4 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 26.5 | pF | ||
| Output Capacitance | Coss | 12.9 | pF | |||
| Reverse Transfer Capacitance | Crss | 5.9 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=0.29A, VGS=10V,RGEN=6Ω | 5 | nS | ||
| Turn-on Rise Time | tr | 18 | nS | |||
| Turn-off Delay Time | td(off) | 36 | nS | |||
| Turn-off Fall Time | tf | 14 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note2, VGS=0V,IS=0.5A | 1.2 | V | ||
| Diode Forward Current | IS | Note1 | 0.5 | A | ||
2412311540_PJSEMI-PJM139NSA_C42431759.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
