High Current N Channel MOSFET PJSEMI PJM2310NSC with 60V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
PJM2310NSC
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
105mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 N-channel
Input Capacitance(Ciss):
510pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
14.6nC@10V
Mfr. Part #:
PJM2310NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM2310NSC is an N-Channel Enhancement Mode Power MOSFET designed for high power and current handling capabilities. It features a VDS of 60V and an ID of 3A, with a low RDS(on) of less than 105m at VGS=10V. This MOSFET is suitable for applications such as battery switches and DC/DC converters, offering reliable performance in a compact SOT-23-3 package.
Product Attributes
- Brand: PingJingSemi
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.35 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=3A | -- | 78 | 105 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 96 | 125 | m |
| Forward Transconductance | gFS | VDS=5V,ID=3A | -- | 3 | -- | S |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | -- | 510 | -- | pF |
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | -- | 34 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | -- | 26 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=30V, ID=3A, VGS=10V,RGEN=1 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V, ID=3A, VGS=10V,RGEN=1 | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V, ID=3A, VGS=10V,RGEN=1 | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V, ID=3A, VGS=10V,RGEN=1 | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=30V,ID=3A,VGS=10V | -- | 14.6 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=3A,VGS=10V | -- | 1.6 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=30V,ID=3A,VGS=10V | -- | 3 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=4A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 4 | A |
| Drain-Source Voltage | VDS | Absolute Maximum Ratings | -- | -- | 60 | V |
| Gate-Source Voltage | VGS | Absolute Maximum Ratings | -- | -- | 20 | V |
| Drain Current-Continuous | ID | Absolute Maximum Ratings | -- | -- | 3 | A |
| Drain Current-Pulsed | IDM | Note1, Absolute Maximum Ratings | -- | -- | 10 | A |
| Maximum Power Dissipation | PD | Absolute Maximum Ratings | -- | -- | 1 | W |
| Junction Temperature | TJ | Absolute Maximum Ratings | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | Absolute Maximum Ratings | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2, Absolute Maximum Ratings | -- | -- | 125 | C/W |
2410311744_PJSEMI-PJM2310NSC_C41784033.pdf
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