N Channel Enhancement Mode Power MOSFET PJSEMI PJM80N68TE with 68V Drain Source Voltage and 80A Current
Key Attributes
Model Number:
PJM80N68TE
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
220pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
147W
Input Capacitance(Ciss):
4.05nF@25V
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
PJM80N68TE
Package:
TO-252
Product Description
Product Overview
The PJM80N68TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers high performance with a VDS of 68V and ID of 80A, and a low RDS(on) of less than 8.6m at VGS=10V. This RoHS compliant and Halogen/Antimony free component is ideal for load switching, PWM applications, and power management.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 68 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 80 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 320 | A | ||
| Single Pulse Avalanche Energy | EAS | Note2 | 81 | mJ | ||
| Maximum Power Dissipation | PD | 147 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.85 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 68 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 2 | 2.8 | 4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=30A | 7.5 | 8.6 | m | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 4050 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | 255 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | 220 | pF | ||
| Total Gate Charge | Qg | VDS=30V,ID=20A, VGS=10V | 35 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V,ID=20A, VGS=10V | 11 | nC | ||
| Gate-Drain Charge | Qgd | VDS=30V,ID=20A, VGS=10V | 9 | nC | ||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 15 | nS | ||
| Turn-on Rise Time | tr | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 94 | nS | ||
| Turn-off Delay Time | td(off) | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 46 | nS | ||
| Turn-off Fall Time | tf | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 32 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | 1.2 | V | ||
| Diode Forward Current | IS | 80 | A | |||
| Forward Transconductance | gFS | Note3,VDS=5V,ID=2A | 6 | S | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 0.55 | |||
2407301136_PJSEMI-PJM80N68TE_C36493749.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
