N Channel Power MOSFET PJSEMI PJM60H02NTE with Continuous 2A Drain Current and TO 252 Package Design
Key Attributes
Model Number:
PJM60H02NTE
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.4pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
280pF
Gate Charge(Qg):
8.5nC
Mfr. Part #:
PJM60H02NTE
Package:
TO-252
Product Description
Product Overview
The PJM60H02NTE is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low gate charge, and low RDS(on), making it an efficient component for these applications. Key features include a high Drain-Source Voltage of 600V and a continuous Drain Current of 2A.
Product Attributes
- Brand: PingJingSemi
- Product Code: PJM60H02NTE
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current-Continuous | ID | 2 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 8 | A | ||
| Single pulse avalanche energy | EAS | Note4 | 80 | mJ | ||
| Avalanche energy, Repetitive | EAR | Note1 | 6.4 | mJ | ||
| Avalanche Current | IAR | Note1 | 1.1 | A | ||
| Maximum Power Dissipation | PD | 35 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 62 | C/W | ||
| Maximum Junction-to-Case | RJC | Note2 | 3.57 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 600 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=1A | -- | 3.6 | 4.3 | |
| Forward Transconductance | gFS | Note3,VDS=15V,ID=1A | -- | 1.8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 280 | -- | pF |
| Output Capacitance | Coss | -- | 31 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 5.4 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=300V, ID=2A, VGS=10V,RG=9.1 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | -- | 5 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 26 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10.5 | -- | nS | |
| Total Gate Charge | Qg | VDD=300V,ID=2A, VGS=10V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.0 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=2A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 2 | A |
2407301136_PJSEMI-PJM60H02NTE_C36493739.pdf
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