PNP transistor ROHM 2SA2071T100Q designed for low frequency amplifiers and high speed switching circuit
Key Attributes
Model Number:
2SA2071T100Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
180MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA2071T100Q
Package:
SOT-89
Product Description
Product Overview
The 2SA2071 is a middle power PNP transistor designed for high-speed switching applications. It features low saturation voltage, strong discharge power for inductive and capacitive loads, and complements the 2SC5894 transistor. This component is suitable for low frequency amplifiers and high-speed switching circuits.
Product Attributes
- Brand: ROHM
- Package: SOT-89 (MPT3), SC-62
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-base voltage | VCBO | -60 | V | |
| Collector-emitter voltage | VCEO | -60 | V | |
| Emitter-base voltage | VEBO | -6 | V | |
| Collector current | IC | -3 | A | |
| Collector current (Pulsed) | ICP*1 | Pw10s duty10% | -6 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation | PD*3 | Mounted on a ceramic board(40400.7mm). | 2.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = -100A | -60 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -60 | V |
| Emitter-base breakdown voltage | BVEBO | IE = -100A | -6 | V |
| Collector cut-off current | ICBO | VCB = -40V | -1.0 | A |
| Emitter cut-off current | IEBO | VEB = -4V | -1.0 | A |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = -2A, IB = -0.2A | -200 (Typ.) | mV |
| DC current gain | hFE | VCE = -2V, IC = -100mA | 120 - 270 | - |
| Transition frequency | fT*4 | VCE = -10V, IE = 100mA, f = 10MHz | 180 | MHz |
| Output capacitance | Cob | VCB = -10V, IE = 0A, f = 1MHz | 50 | pF |
| Turn-On time | ton | IC = -3A, IB1 = -300mA, IB2 = 300mA, VCC -25V, RL = 8.3 See test circuit | 20 | ns |
| Storage time | tstg | 150 | ns | |
| Fall time | tf | 20 | ns |
*1 Pw10s duty10%
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40400.7mm).
*4 Pulsed
1811081110_ROHM-2SA2071T100Q_C308631.pdf
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