30 volt 5 amp transistor ROHM 2SCR542PT100 optimized for low frequency amplification and switching
Key Attributes
Model Number:
2SCR542PT100
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
2SCR542PT100
Package:
TO-243AA
Product Description
2SCR542P Middle Power Transistor (30V / 5A)
The 2SCR542P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, with a typical VCE(sat) of 400mV (Max.) at IC/IB=2A/100mA, and high-speed switching capabilities.
Product Attributes
- Brand: ROHM
- Package: SOT-89 (MPT3) / SC-62
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Values | Unit |
| Collector-base voltage | VCBO | 30 | V | |
| Collector-emitter voltage | VCEO | 30 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | IC | 5 | A | |
| Collector current (Pulsed) | ICP*1 | Pw=10ms, Single Pulse | 10 | A |
| Power dissipation (Reference land) | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation (Ceramic board) | PD*3 | Mounted on a ceramic board.(40400.7mm) | 2.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = 100A | 30 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 30 | V |
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | V |
| Collector cut-off current | ICBO | VCB = 30V | 1.0 | A |
| Emitter cut-off current | IEBO | VEB = 4V | 1.0 | A |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = 2A, IB = 100mA (Pulsed) | 400 | mV |
| DC current gain | hFE | VCE = 2V, IC = 500mA | 200 - 500 | - |
| Transition frequency | fT*4 | VCE = 10V, IE = -100mA, f = 100MHz (Pulsed) | 250 | MHz |
| Output capacitance | Cob | VCB = 10V, IE = 0A, f = 1MHz | 25 | pF |
| Turn-On time | ton | IC = 2.5A, IB1 = 250mA, IB2 = -250mA, VCC 10V, RL = 3.9 (See test circuit) (Pulsed) | 40 | ns |
| Storage time | tstg | (Pulsed) | 320 | ns |
| Fall time | tf | (Pulsed) | 25 | ns |
2412052036_ROHM-2SCR542PT100_C559596.pdf
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