High speed switching transistor ROHM 2SC5876T106Q with 80 nanoseconds turn off time and low saturation voltage
Key Attributes
Model Number:
2SC5876T106Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5876T106Q
Package:
SOT-323-3
Product Description
Product Overview
The 2SC5876 is a medium power transistor designed for high-speed switching applications. It features fast switching speeds with a typical turn-off time of 80ns, low saturation voltage (typically 150mV), and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2088 and is suitable for low frequency amplifiers and high-speed switching circuits.
Product Attributes
- Brand: ROHM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||
| Collector-base voltage | VCBO | 60 | V | |||
| Collector-emitter voltage | VCEO | 60 | V | |||
| Emitter-base voltage | VEBO | 6 | V | |||
| Collector current | IC | 500 | mA | |||
| Collector current (Pulsed) | ICP*1 | Pw=10ms | 1.0 | A | ||
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 200 | mW | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 to +150 | ||||
| Collector-base breakdown voltage | BVCBO | IC = 100A | 60 | V | ||
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 60 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | - | ||
| Collector cut-off current | ICBO | VCB = 40V | - | 1 | A | |
| Emitter cut-off current | IEBO | VEB = 4V | - | 1 | A | |
| Collector-emitter saturation voltage | VCE(sat) | IC = 100mA, IB = 10mA | - | 150 | 300 | mV |
| DC current gain | hFE | VCE = 2V, IC = 50mA | 120 | - | 390 | - |
| Transition frequency | fT*3 | VCE = 10V, IE = -100mA, f = 100MHz | - | 300 | - | MHz |
| Output capacitance | Cob | VCB = 10V, IE = 0mA, f = 1MHz | - | 5 | - | pF |
| Turn-On time | ton*3 | IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC 25V, RL = 50 | - | 70 | - | ns |
| Storage time | tstg*3 | - | 130 | - | ns | |
| Fall time | tf*3 | - | 80 | - | ns |
2203101903_ROHM-2SC5876T106Q_C2981760.pdf
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