High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and signal amplification

Key Attributes
Model Number: 2SA1036KFRAT146R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1036KFRAT146R
Package:
SOT-346
Product Description

Product Overview

The 2SA1036K FRA is a medium power PNP transistor designed for general purpose and small signal amplification. It features a high collector current capability (500mA) within a small SOT-346 (SMT3) package, low VCE(sat) for ideal low-voltage operation, and complements the 2SC2411K FRA. This AEC-Q101 qualified transistor is suitable for various electronic applications.

Product Attributes

  • Brand: ROHM
  • Certification: AEC-Q101 Qualified
  • Package: SOT-346 (SMT3)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -32 V
Emitter-base voltage VEBO -5 V
Collector current IC -500 mA
Power dissipation PD*1 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Collector-base breakdown voltage BVCBO IC = -100A -40 - V
Collector-emitter breakdown voltage BVCEO IC = -1mA -32 - V
Emitter-base breakdown voltage BVEBO IE = -100A -5 - V
Collector cut-off current ICBO VCB = -20V - -1.0 A
Emitter cut-off current IEBO VEB = -4V - -1.0 A
Collector-emitter saturation voltage VCE(sat) IC = -300mA, IB = -30mA - -600 mV
DC current gain hFE VCE = -3V, IC = -100mA 120 390 -
Transition frequency fT VCE = -5V, IE = 20mA, f = 100MHz - 200 - MHz
Output capacitance Cob VCB = -10V, IE = 0A, f = 1MHz - 7.0 pF

1811031210_ROHM-2SA1036KFRAT146R_C308627.pdf

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