Low frequency amplifier transistor ROHM US6X8TR with medium power rating and compact SOT363T package
Key Attributes
Model Number:
US6X8TR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
320MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
US6X8TR
Package:
TUMT-6
Product Description
Product Overview
The US6X8 is a complex medium power transistor designed for low frequency amplifier applications. It features high current capability and low saturation voltage (VCE(sat) max. 350mV at IC=500mA/IB=25mA). This transistor is available in the SOT-363T (TUMT6) package.
Product Attributes
- Brand: ROHM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part No. | Package | VCEO (V) | IC (A) | PD (W/Total) | Tj (C) | Tstg (C) | BVCBO (V) | BVCEO (V) | BVEBO (V) | ICBO (nA) | IEBO (nA) | VCE(sat) (mV) | hFE | fT (MHz) | Cob (pF) |
| US6X8 | SOT-363T (TUMT6) | 30 | 1 | 0.4 / 1.0*3*4 | 150 | -55 to +150 | 30 | 30 | 6 | 100 | 100 | max.350 (at IC=500mA/IB=25mA) | 270 - 680 (at VCE=2V, IC=100mA) | 320 (at VCE=2V, IE=-100mA, f=100MHz) | 7 (at VCB=10V, IE=0A, f=1MHz) |
*1 Pw=1ms Single pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(25x25x0.8mm)
*4 0.7W per element must not be exceeded.
2504151621_ROHM-US6X8TR_C2987917.pdf
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